High Current Pulse NPN Transistor DIODES FMMT415TD Designed for Avalanche Mode Operation Applications
Key Attributes
Model Number:
FMMT415TD
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
40MHz
Type:
NPN
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT415TD
Package:
SOT-23
Product Description
Product Overview
The FMMT415/417 are NPN silicon planar bipolar transistors engineered for avalanche mode operation. Their design, featuring tight process control and low inductance packaging, enables the generation of high-current pulses with rapid edges. These devices are specifically designed for avalanche mode applications, offering high peak avalanche current and robust breakdown voltages.
Product Attributes
- Brand: Diodes Incorporated
- Certifications: AEC-Q101 Qualified
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Packaging: SOT23
- Material: Molded Plastic, Green Molding Compound
Technical Specifications
| Characteristic | Symbol | FMMT415 | FMMT417 | Unit | Test Condition |
| Breakdown Voltage | BVCES | 260 | 320 | V | IC = 1mA, TJ = -55 to +150C |
| BVCEO | 100 | 100 | V | IC = 100A | |
| BVEBO | 6 | 6 | V | IE = 100A | |
| Collector Cutoff Current | ICBO | 100 nA | nA | VCB = 180V | |
| Collector Cutoff Current | ICBO | 10 A | A | VCB = 180V, TJ = +100C | |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 4V | |
| Static Forward Current Transfer Ratio | hFE | 25 | IC = 10mA, VCE = 10V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | 500 | mV | IC = 10mA, IB = 1mA | |
| Base-Emitter Saturation Voltage | VBE(sat) | 900 | mV | IC = 10mA, IB = 1mA | |
| Pulsed Current in Second Breakdown | IUSB | 25 | 35 | A | VC = 200V, CCE = 620pF |
| Pulsed Current in Second Breakdown | IUSB | A | VC = 250V, CCE = 620pF | ||
| Collector-Emitter Inductance | Lce | 2.5 | nH | Standard SOT23 leads | |
| Output Capacitance | Cobo | 8 | pF | VCB = 20V, IE = 0, f = 100MHz | |
| Transition Frequency | fT | 40 | MHz | VCE = 20V, IC = 10mA, f = 20MHz | |
| Peak Avalanche Current (Pulse Width = 20ns) | ICM | 60 | 60 | A | |
| Continuous Collector Current | IC | 500 | 500 | mA | |
| Power Dissipation | PD | 500 | 500 | mW | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 250 | 250 | C/W | @TA = +25C (Note 5) |
| Thermal Resistance, Junction to Lead | RJL | 197 | 197 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | ||
| Electrostatic Discharge (Human Body Model) | ESD HBM | 4,000 | V | JEDEC Class 3A | |
| Electrostatic Discharge (Machine Model) | ESD MM | 400 | V | C | |
Applications
- Laser Diode Drivers for Ranging and Measurement (LIDAR)
- Radar Systems
- Fast Edge Switch Generator
- High Speed Pulse Generators
2304140030_DIODES-FMMT415TD_C460073.pdf
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