N channel mosfet with 7.5 amp continuous drain current and low Ciss Chongqing Pingwei Tech 8N06G device

Key Attributes
Model Number: 8N06G
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
7.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
82mΩ@10V,4A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
20pF
Number:
1 N-channel
Input Capacitance(Ciss):
505pF@30V
Pd - Power Dissipation:
13.5W
Gate Charge(Qg):
11nC@30V
Mfr. Part #:
8N06G
Package:
TO-252-2
Product Description

Product Overview

The 8N06(G,D) is a high-performance N-CHANNEL MOSFET designed for various applications. It features a 7.5A continuous drain current and a 60V drain-source voltage rating. Key advantages include low gate charge, low Ciss, fast switching speeds, and 100% avalanche tested for enhanced reliability. The MOSFET also offers improved dv/dt capability, making it suitable for demanding power management tasks. Available in TO-252 and TO-251 packages.

Product Attributes

  • Brand: Perfectway
  • Origin: China (www.perfectway.cn)
  • Type: N-CHANNEL MOSFET
  • Package Options: TO-252, TO-251

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (TC=25, unless otherwise noted)
Drain-Source Voltage VDSS 60 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 7.5 A
Pulsed Drain Current (Note 1) IDM 11 A
Single Pulse Avalanche Energy (Note 2) EAS 25 mJ
Operating Junction and Storage Temperature Range TJ,TSTG -55 +150
Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds TL 260
Thermal Characteristics
Thermal resistance, Junction to Case Rth(J-c) 9.2 /W
Maximum Power Dissipation PD TC=25 13.5 W
Electrical Characteristics (Tc=25, unless otherwise noted)
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250uA 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 uA
Gate-Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA
Gate-Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA
Gate-Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 - 2.5 V
Drain-Source On-State Resistance RDS(on) VGS=10V, ID=4A - 71 82 m
RDS(on) VGS=4.5V, ID=4A - 92 107 m
Dynamic Characteristics
Input Capacitance Ciss VDS=30V, VGS=0V, f=1.0MHz - 505 - pF
Output Capacitance Coss - 30 - pF
Reverse Transfer Capacitance Crss - 20 - pF
Switching Characteristics
Turn-On Delay Time td(on) VDD=30V, ID=5A, RG=3 (Note 3,4) - 7.5 - ns
Turn-On Rise Time tr - 4.5 - ns
Turn-Off Delay Time td(off) - 22.5 - ns
Turn-Off Fall Time tf - 9 - ns
Total Gate Charge Qg VDS=30V, ID=5A, VGS=10V (Note 3,4) - 11 - nC
Qgs - 4 - nC
Qgd - 3.5 - nC
Drain-Source Body Diode Characteristics and Maximum Ratings
Continuous Diode Forward Current IS - - 8 A
Pulsed Diode Forward Current ISM - - 11 A
Diode Forward Voltage VSD IS=7.5A, VGS=0V - - 1.2 V

Package Dimensions

TO-252

Dimension Min (inches) Max (inches) Min (mm) Max (mm)
A .230 .246 5.85 6.25
B .250 .264 6.35 6.75
C .207 .218 5.27 5.54
D .037 .045 0.93 1.14
E .106 .138 2.70 3.50
F .028 .033 0.72 0.84
G .024 .041 0.60 1.05
H .028 .043 0.72 1.10
I .085 .096 2.15 2.45
J .037 .047 0.95 1.20
K .018 .026 0.45 0.65
L .018 .024 0.45 0.60
P .081 .094 2.05 2.40
M .000 .006 0.00 0.15
N -- .008 -- 0.20
a 0 10 0 10

TO-251

Dimension Min (inches) Max (inches) Min (mm) Max (mm)
A .230 .246 5.85 6.25
B .250 .266 6.35 6.75
C .207 .218 5.27 5.54
D .037 .045 0.93 1.14
E .173 .205 4.40 5.20
F .028 .033 0.72 0.84
H .028 .043 0.70 1.10
I .085 .096 2.15 2.45
J .037 .047 0.95 1.20
K .018 .026 0.45 0.65
L .018 .024 0.45 0.60
N -- .008 -- 0.20
P .081 .094 2.05 2.40

2410122028_Chongqing-Pingwei-Tech-8N06G_C432631.pdf

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