ESD Protected MOSFET ChipNobo PMZ550UNEYL-CN with 0.85A Continuous Drain Current and Compact Package

Key Attributes
Model Number: PMZ550UNEYL-CN
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
850mA
RDS(on):
350mΩ@4.5V;435mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.3pF
Output Capacitance(Coss):
4.8pF
Input Capacitance(Ciss):
38.2pF
Pd - Power Dissipation:
200mW
Gate Charge(Qg):
900pC@15V
Mfr. Part #:
PMZ550UNEYL-CN
Package:
DFN1006-3L
Product Description

Product Overview

The PMZ550UNEYL-CN is a high-performance N-channel MOSFET designed for various electronic applications. It features a VDS of 30V and a continuous drain current (ID) of 0.85A at 25C, with low on-resistance (RDS(ON)) of typically 350m at VGS = 4.5V. This ESD-protected device comes in a compact DFN1006-3L package, making it suitable for space-constrained designs. It is engineered for use with residential and commercial equipment.

Product Attributes

  • Brand: ChipNobo
  • Package: DFN1006-3L
  • ESD Protected
  • Pb-Free Assembly

Technical Specifications

Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings
VDS Drain-Source Voltage 30 V
VGS Gate-Source Voltage 12 V
ID Continuous Drain Current (TA= 25) 0.85 A
ID Continuous Drain Current (TA= 100) 0.5 A
PD Power Dissipation (TA= 25) 0.2 W
RJA Thermal Resistance from Junction to Ambient 625 /W
TJ Maximum Junction Temperature -55 +150
TSTG Storage Temperature -55 +150
IDM Pulsed Drain Current (note1) 2.5 A
Electrical Characteristics
V(BR)DS Drain-source breakdown voltage VGS = 0V, ID= 250A 30 V
IDS Zero gate voltage drain current VDS = 24V, VGS = 0V 1 A
IGS Gate to body leakage current VDS = 0V, VGS = 12V 10 A
VGS(th) Gate threshold voltage VDS = VGS, ID = 250A 0.6 0.95 1.3 V
RDS(on) Static drain-source on resistance (Note2) VGS = 4.5V, ID = 0.5A 350 420 m
VGS = 2.5V, ID = 0.3A 435 600 m
Dynamic Characteristics
Ciss Input capacitance VDS = 15V, VGS = 0V, f = 1MHz 38.2 pF
Coss Output capacitance VDS = 15V, VGS = 0V, f = 1MHz 4.8 pF
Crss Reverse transfer capacitance VDS = 15V, VGS = 0V, f = 1MHz 3.3 pF
Qg Total gate charge VDS = 15V, ID = 0.7A, VGS = 4.5V 0.9 nC
Qgs Gate-source charge VDS = 15V, ID = 0.7A, VGS = 4.5V 0.3 nC
Qgd Gate-drain charge VDS = 15V, ID = 0.7A, VGS = 4.5V 0.16 nC
Switching Characteristics
td(on) Turn-on delay time VDS = 15V, ID = 0.7A, RGEN = 6, VGS = 4.5V 5.4 ns
tr Turn-on rise time VDS = 15V, ID = 0.7A, RGEN = 6, VGS = 4.5V 20.2 ns
td(off) Turn-off delay time VDS = 15V, ID = 0.7A, RGEN = 6, VGS = 4.5V 34.4 ns
tf Turn-off fall time VDS = 15V, ID = 0.7A, RGEN = 6, VGS = 4.5V 30.3 ns
Drain-Source Diode Characteristics and Maximum Ratings
VSD Drain to source diode forward voltage VGS = 0V, IS = 0.25A 0.9 1.1 V
IS Maximum continuous drain to source diode forward current 0.85 A
trr Body diode reverse recovery time IF = 0.25A, di/dt = 100A/s 24.2 ns
Qrr Body diode reverse recovery charge IF = 0.25A, di/dt = 100A/s 3.2 nC
Ordering Information
Part Number Packaging Reel Size
PMZ550UNEYL-CN 10000/Tape & Reel 7 inch
Package Outline Drawing (DFN1006-3L)
Symbol DIMENSIONS MILLIMETERS INCHES
Min Typ Max Min Typ Max
A 0.50 0.55 0.60 0.0197 0.0236
D 0.55 0.60 0.65 0.0217 0.0236 0.0256
E 0.95 1.00 1.05 0.0374 0.0394 0.0413
D1 0.45 0.50 0.55 0.0177 0.0197 0.0217
E1 0.20 0.25 0.30 0.0079 0.0098 0.0118
e 0.35 BSC
L 0.20 0.25 0.30 0.0079 0.0098 0.0118
K 0.35 0.40 0.45 0.0138 0.0157 0.0177
b 0.10 0.15 0.20 0.0039 0.0059 0.0079
G 0.15 0.20 0.25 0.0059 0.0079 0.0098
X1 0.70 0.028
Y1 0.40 0.016
Y2 0.30 0.012
Y3 1.10 0.043
X3 0.20 0.008
X2 0.25 0.010

For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.


2507091655_ChipNobo-PMZ550UNEYL-CN_C42436708.pdf

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