ChipNobo 2N7002K R1 00001 CN MOSFET transistor designed for ruggedness reliability and load switching
Key Attributes
Model Number:
2N7002K_R1_00001-CN
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-40℃~+150℃
RDS(on):
900mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@1mA
Reverse Transfer Capacitance (Crss@Vds):
10pF
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
40pF
Gate Charge(Qg):
-
Mfr. Part #:
2N7002K_R1_00001-CN
Package:
SOT-23
Product Description
Product Overview
This is a high-density cell design MOSFET with low RDS(ON), functioning as a voltage-controlled small signal switch. It offers ruggedness, reliability, and high saturation current capability, along with ESD protection. Ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: ChipNobo
- Package Type: SOT-23 Small Outline Plastic Package
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
- Certifications: Epoxy UL 94V-0
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Mechanical Data | ||||
| Drain-Source Voltage | V(BR)DSS | 60 | V | |
| RDS(ON)MAX | 5@10V, 5.3@4.5V | |||
| Continuous Drain Current | ID | 340 | mA | |
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||
| Drain-Source Voltage | VDS | 60 | V | |
| Gate-Source Voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | 340 | mA | |
| Power Dissipation | PD | 350 | mW | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | Tstg | -50-+150 | ||
| Thermal Resistance From Junction to Ambient | RJA | 357 | /W | |
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VGS=0V, ID=250uA |
| Gate-Threshold voltage* | Vth(GS) | 1 | V | VDS=VGS, ID=1mA |
| Vth(GS) | 1.3 | V | VDS=VGS, ID=1mA | |
| Vth(GS) | 2.5 | V | VDS=VGS, ID=1mA | |
| Gate-body Leakage | IGSS1 | 10 | uA | VDS=0V, VGS=20V |
| IGSS | 200 | nA | VDS=0V, VGS=10V | |
| IGSS | 100 | nA | VDS=0V, VGS=5V | |
| Zero Gate Voltage Drain current | IDSS | 1 | uA | VDS=48V, VGS=0V |
| Drain-Source On-Resistance* | RDS(ON) | 0.9 | VGS=10V, ID=500mA | |
| RDS(ON) | 5.3 | VGS=4.5V, IC=200mA | ||
| Diode Forward voltage | VSD | 1.50 | V | IS=300mA, VGS=0V |
| Input capacitance** | Ciss | 40 | pF | VDS=10V, VGS=0V,f=1MHz |
| Output capacitance** | Coss | 30 | pF | VDS=10V, VGS=0V,f=1MHz |
| Reverse Transfer capacitance** | Crss | 10 | pF | VDS=10V, VGS=0V,f=1MHz |
| SWITCHING TIME | ||||
| Turn-on Time** | td(on) | 10 | ns | VDD=50V, RL=250, VGS=10V, RGS=50, RG=50 |
| Turn-off Time** | td(off) | 15 | ns | VDD=50V, RL=250, VGS=10V, RGS=50, RG=50 |
| Reverse recovery Time | trr | 30 | ns | VGS=0V, IS=300mA, VR=25V, Dis/dt=-100a/uS |
| GATE-SOURCE ZENER DIODE | ||||
| Gate-Source Breakdown Voltage | BVGSO | 21.5 | V | Igs=1mA(Open Drain) |
| BVGSO | 30 | V | Igs=1mA(Open Drain) | |
Notes: * Pulse Test: Pulse Width 300us, Duty Cycle2%. ** These parameters have on way to verify.
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-2N7002K-R1-00001-CN_C42379416.pdf
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