Power MOSFET ChipNobo IRFB4115PBF CN with Proprietary Trench Technology and Fast Recovery Body Diode
Key Attributes
Model Number:
IRFB4115PBF-CN
Product Custom Attributes
Mfr. Part #:
IRFB4115PBF-CN
Package:
TO-220
Product Description
Product Overview
This N-Channel Power MOSFET features proprietary New Trench Technology, offering a low RDS(ON) of 8.5m at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. It is designed for applications such as DC/DC converters, motor control, and synchronous rectification.
Product Attributes
- Brand: ChipNobo
- Product Line: N-Channel Power MOSFET
- Technology: Proprietary New Trench Technology
Technical Specifications
| Part Number | Package | BV | Symbol | Parameter | Unit | Test Conditions | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|---|---|---|
| IRFB4115PBF-CN | TO-220 | 150V | VDSS | Drain-to-Source Voltage | V | 150 | -- | -- | |
| IRFB4115PBF-CN | TO-220 | VGSS | Gate-to-Source Voltage | V | -- | -- | 20 | ||
| IRFB4115PBF-CN | TO-220 | ID | Continuous Drain Current @ Tc=25 | A | -- | 120 | -- | ||
| IRFB4115PBF-CN | TO-220 | ID | Continuous Drain Current @ Tc=100 | A | -- | 84 | -- | ||
| IRFB4115PBF-CN | TO-220 | IDM | Pulsed Drain Current at VGS=10V | A | -- | 380 | -- | ||
| IRFB4115PBF-CN | TO-220 | EAS | Single Pulse Avalanche Energy L=1mH | mJ | -- | 450 | -- | ||
| IRFB4115PBF-CN | TO-220 | PD | Power Dissipation | W | -- | 208 | -- | ||
| IRFB4115PBF-CN | TO-220 | Derating Factor above 25 | W/ | -- | 0.67 | -- | |||
| IRFB4115PBF-CN | TO-220 | TL | Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | -- | 300 | -- | |||
| IRFB4115PBF-CN | TO-220 | TPAK | Maximum Temperature for Soldering Package Body for 10 seconds | -- | 260 | -- | |||
| IRFB4115PBF-CN | TO-220 | TJ& TSTG | Operating and Storage Temperature Range | -55 | -- | 150 | |||
| IRFB4115PBF-CN | TO-220 | RJC | Thermal Resistance, Junction-to-Case | /W | -- | 0.6 | -- | ||
| IRFB4115PBF-CN | TO-220 | RJA | Thermal Resistance, Junction-to-Ambient | /W | -- | 62 | -- | ||
| BVDSS | Drain-to-Source Breakdown Voltage | V | VGS=0V, ID=250uA | 150 | -- | -- | |||
| IDSS | Drain-to-Source Leakage Current | uA | VDS=150V, VGS=0V | -- | -- | 1 | |||
| IDSS | Drain-to-Source Leakage Current | uA | VDS=150V, VGS=0V, TJ =125 | -- | -- | 100 | |||
| IGSS | Gate-to-Source Leakage Current | nA | VGS=+20V, VDS=0V | -- | -- | +100 | |||
| IGSS | Gate-to-Source Leakage Current | nA | VGS=-20V, VDS=0V | -- | -- | -100 | |||
| RDS(ON) | Static Drain-to-Source On-Resistance | m | VGS=10V, ID=20A | -- | 8.5 | 10.5 | |||
| VGS(TH) | Gate Threshold Voltage | V | VDS=VGS, ID=250uA | 2.0 | -- | 4.0 | |||
| Ciss | Input Capacitance | pF | VGS=0V, VDS=75V, f=1.0MHZ | -- | 2980 | -- | |||
| Crss | Reverse Transfer Capacitance | pF | f=1.0MHZ | -- | 4.0 | -- | |||
| Coss | Output Capacitance | pF | -- | 283 | -- | ||||
| RG | Gate Series Resistance | -- | 2.0 | -- | |||||
| Qg | Total Gate Charge | nC | ID=20A, VGS=0 to 10V VDD=75V | -- | 39 | -- | |||
| Qgs | Gate-to-Source Charge | nC | -- | 13 | -- | ||||
| Qgd | Gate-to-Drain (Miller) Charge | nC | -- | 6.8 | -- | ||||
| ISD | Continuous Source Current | A | -- | -- | 120 | ||||
| ISM | Pulsed Source Current | A | -- | -- | 380 | ||||
| VSD | Diode Forward Voltage | V | IS=40A, VGS=0V | -- | -- | 1.2 | |||
| trr | Reverse recovery time | ns | VGS=0V ,IF=20A, diF/dt=100A/s | -- | 113 | -- | |||
| Qrr | Reverse recovery charge | nC | -- | 141 | -- | ||||
| td(ON) | Turn-on Delay Time | ns | VDD=75V, ID=20A, VGS= 10V RG=3.0 | -- | 21 | -- | |||
| trise | Rise Time | ns | -- | 7.6 | -- | ||||
| td(OFF) | Turn-Off Delay Time | ns | -- | 37 | -- | ||||
| tfall | Fall Time | ns | -- | 6.7 | -- |
For additional information, please visit our website http://www.chipnobo.com, or consult your nearest Chipnobo sales office for further assistance.
2507091655_ChipNobo-IRFB4115PBF-CN_C42436713.pdf
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