High ESD capability dual P channel MOSFET CYSTECH MTDP2004S6R designed for low voltage drive and switching
Key Attributes
Model Number:
MTDP2004S6R
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
900mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
2 P-Channel
Output Capacitance(Coss):
21pF
Input Capacitance(Ciss):
59pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
380pC@4.5V
Mfr. Part #:
MTDP2004S6R
Package:
SOT-363
Product Description
Product Overview
The CYStek MTDP2004S6R is a Dual P-CHANNEL MOSFET designed for low-voltage drive applications. It features low on-resistance, high ESD capability, and high-speed switching, making it suitable for various electronic circuits requiring efficient power management.
Product Attributes
- Brand: CYStek
- Package: SOT-363 (Pb-free lead plating and halogen-free package)
- Certifications: Pb-free, RoHS compliant, Green compound
Technical Specifications
| Parameter | Symbol | Value | Unit | Conditions |
| Drain-Source Voltage | BVDSS | -20 | V | VGS=0V, ID=-250A |
| Breakdown Voltage vs Ambient Temperature | - | Normalized | ID=-250A, VGS=0V | |
| - | - | - | ||
| Gate-Source Voltage | VGS | 8 | V | - |
| - | - | - | ||
| - | - | - | ||
| Continuous Drain Current | ID | -500 | mA | @ TA=25C, VGS=-4.5V (Note 3) |
| -360 | mA | @ TA=85C, VGS=-4.5V (Note 3) | ||
| - | mA | - | ||
| - | mA | - | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 0.64 (typ) | VGS=-4.5V, ID=-430mA | |
| 1.1 (typ) | VGS=-2.5V, ID=-300mA | |||
| 1.7 (typ) | VGS=-1.8V, ID=-10mA | |||
| Pulsed Drain Current | IDM | -1.5 | A | (Notes 1, 2) |
| - | - | |||
| Maximum Power Dissipation | PD | 300 | mW | TA=25 |
| 160 | TA=85 | |||
| Operating Junction and Storage Temperature | Tj, Tstg | -55~+150 | C | - |
| - | - | |||
| Thermal Resistance, Junction-to-Ambient(PCB mounted) | Rth,ja | 417 | C/W | (Note) |
| Threshold Voltage | VGS(th) | -0.5 ~ -1.2 | V | VDS=VGS, ID=-250A |
| Gate Charge | Qg | 1.2 (typ) | nC | VDS=-5V, ID=-250mA, VGS=-4.5V |
| Source-Drain Diode Voltage | VSD | -0.78 ~ -1.2 | V | VGS=0V, IS=-115mA |
2410121716_CYSTECH-MTDP2004S6R_C373443.pdf
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