Low Saturation NPN Transistor DIODES FMMT624TA Suitable for High Current Applications and DC DC Modules
Key Attributes
Model Number:
FMMT624TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
625mW
Transition Frequency(fT):
155MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
125V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT624TA
Package:
SOT-23
Product Description
Product Overview
The FMMT624 is a 125V NPN low saturation transistor designed for high current applications. It offers a high continuous collector current of 1A and a peak pulse current of 3A, with a low equivalent on-resistance (RCE(sat) = 160m). This device is suitable for DC-DC/DC-AC modules, regulators, LED drivers, and CCFL backlighting inverters. It is qualified to AEC-Q101 standards for high reliability and is a "Green" device, being totally lead-free and fully RoHS compliant.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded plastic, "Green" molding compound
- Certifications: AEC-Q101, UL Flammability Classification Rating 94V-0, J-STD-020 Moisture Sensitivity Level 1
- Compliance: Totally Lead-Free & Fully RoHS compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 125 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 125 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-off Current | ICBO | <10 | nA | VCB = 100V |
| Emitter Cut-off Current | IEBO | <10 | nA | VEB = 6.0V |
| Collector Emitter Cut-off Current | ICES | <10 | nA | VCES = 100V |
| Static Forward Current Transfer Ratio | hFE | 200 (Typ) | - | IC = 10mA, VCE = 10V |
| Static Forward Current Transfer Ratio | hFE | 300 (Typ) | - | IC = 200mA, VCE = 10V |
| Static Forward Current Transfer Ratio | hFE | 140 (Typ) | - | IC = 1A, VCE = 10V |
| Static Forward Current Transfer Ratio | hFE | 18 (Typ) | - | IC = 3A, VCE = 10V |
| Collector-Emitter Saturation Voltage | VCE(sat) | 26 (Typ) | mV | IC = 0.1A, IB = 10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 70 (Typ) | mV | IC = 0.5A, IB = 50mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 160 (Typ) | mV | IC = 0.5A, IB = 10mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | 165 (Typ) | mV | IC = 1A, IB = 50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.85 (Typ) | V | IC = 1A, IB = 50mA |
| Base-Emitter Voltage | VBE(on) | 0.70 (Typ) | V | IC = 1A, VCE = 10V |
| Transition Frequency | fT | 100 (Min) | MHz | IC = 50mA, VCE = 10V, f = 100MHz |
| Collector Output Capacitance | Cobo | 7 (Typ) | pF | VCB = 10V, f = 1MHz |
| Turn-On Time | t(on) | 60 (Typ) | ns | VCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA |
| Turn-Off Time | t(off) | 1300 (Typ) | ns | VCC = 50V, IC = 0.5A, IB1 = -IB2 = 50mA |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Current | ICM | 3 | A | (Note 5) |
| Power Dissipation | PD | 625 | mW | (Note 5) |
| Power Dissipation | PD | 806 | mW | (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 200 | C/W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 155 | C/W | (Note 6) |
| Thermal Resistance, Junction to Leads | RJL | 194 | C/W | (Note 7) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V |
1809081626_DIODES-FMMT624TA_C47297.pdf
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