150V NPN Silicon Planar Medium Power Transistor Diodes FMMT495TC with 1A Continuous Collector Current
Product Overview
The FMMT495 is a 150V NPN silicon planar medium power transistor in a SOT23 package. It offers a continuous collector current of 1A, a peak pulse current of 2A, and a power dissipation of 500mW. This device is characterized for high current gain hold-up up to 1A and is totally lead-free, fully RoHS compliant, and halogen and antimony free, qualifying as a "Green" device. It is also qualified to AEC-Q101 standards for high reliability and is PPAP capable.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101, RoHS, Halogen and Antimony Free ("Green" Device)
- Compliance: Totally Lead-Free & Fully RoHS compliant, PPAP capable
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 170 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCEO | 150 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 150V |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5V |
| Collector Emitter Cutoff Current | ICES | 100 | nA | VCE = 150V |
| Static Forward Current Transfer Ratio | hFE | 100 - 300 | IC = 250mA, VCE = 10V | |
| Static Forward Current Transfer Ratio | hFE | 50 - | IC = 500mA, VCE = 10V | |
| Static Forward Current Transfer Ratio | hFE | 10 - | IC = 1A, VCE = 10V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.2 | V | IC = 250mA, IB = 25mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | V | IC = 500mA, IB = 50mA |
| Base-Emitter Turn-On Voltage | VBE(ON) | 1.0 | V | IC = 500mA, VCE = 10V |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.0 | V | IC = 500mA, IB = 50mA |
| Output Capacitance | COBO | 10 | pF | VCB = 10V, f = 1MHz |
| Transition Frequency | fT | 100 | MHz | VCE = 10V, IC = 50mA, f = 100MHz |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Current | ICM | 2 | A | |
| Power Dissipation | PD | 500 | mW | @TA = +25C |
| Thermal Resistance, Junction to Ambient | RJA | 250 | C/W | @TA = +25C |
| Thermal Resistance, Junction to Lead | RJL | 197 | C/W | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
2412251105_DIODES-FMMT495TC_C5157727.pdf
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