150V NPN Silicon Planar Medium Power Transistor Diodes FMMT495TC with 1A Continuous Collector Current

Key Attributes
Model Number: FMMT495TC
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FMMT495TC
Package:
SOT-23
Product Description

Product Overview

The FMMT495 is a 150V NPN silicon planar medium power transistor in a SOT23 package. It offers a continuous collector current of 1A, a peak pulse current of 2A, and a power dissipation of 500mW. This device is characterized for high current gain hold-up up to 1A and is totally lead-free, fully RoHS compliant, and halogen and antimony free, qualifying as a "Green" device. It is also qualified to AEC-Q101 standards for high reliability and is PPAP capable.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: AEC-Q101, RoHS, Halogen and Antimony Free ("Green" Device)
  • Compliance: Totally Lead-Free & Fully RoHS compliant, PPAP capable

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO170VIC = 100A
Collector-Emitter Breakdown VoltageBVCEO150VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Collector Cutoff CurrentICBO100nAVCB = 150V
Emitter Cutoff CurrentIEBO100nAVEB = 5V
Collector Emitter Cutoff CurrentICES100nAVCE = 150V
Static Forward Current Transfer RatiohFE100 - 300IC = 250mA, VCE = 10V
Static Forward Current Transfer RatiohFE50 -IC = 500mA, VCE = 10V
Static Forward Current Transfer RatiohFE10 -IC = 1A, VCE = 10V
Collector-Emitter Saturation VoltageVCE(SAT)0.2VIC = 250mA, IB = 25mA
Collector-Emitter Saturation VoltageVCE(SAT)0.3VIC = 500mA, IB = 50mA
Base-Emitter Turn-On VoltageVBE(ON)1.0VIC = 500mA, VCE = 10V
Base-Emitter Saturation VoltageVBE(SAT)1.0VIC = 500mA, IB = 50mA
Output CapacitanceCOBO10pFVCB = 10V, f = 1MHz
Transition FrequencyfT100MHzVCE = 10V, IC = 50mA, f = 100MHz
Continuous Collector CurrentIC1A
Peak Pulse CurrentICM2A
Power DissipationPD500mW@TA = +25C
Thermal Resistance, Junction to AmbientRJA250C/W@TA = +25C
Thermal Resistance, Junction to LeadRJL197C/W@TA = +25C
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

2412251105_DIODES-FMMT495TC_C5157727.pdf

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