100V NPN Medium Power Transistor Diodes FCX493TA in SOT89 Package for DC DC Modules and Load Control
Key Attributes
Model Number:
FCX493TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1W
Transition Frequency(fT):
150MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
1A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-65℃~+150℃
Mfr. Part #:
FCX493TA
Package:
SOT-89
Product Description
Product Overview
The FCX493 is a 100V NPN medium power transistor in a SOT89 package. It offers a high continuous current of 1A, low saturation voltage, and is designed for applications such as load management, solenoids, relays, and actuator drivers, as well as DC-DC modules. This device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT89
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Complementary PNP Type: FCX593
- Automotive-compliant part available: FCX493Q
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 120 | V | |
| Collector-Emitter Voltage | VCEO | 100 | V | |
| Emitter-Base Voltage | VEBO | 7 | V | |
| Continuous Collector Current | IC | 1 | A | |
| Peak Pulse Current | ICM | 2 | A | |
| Continuous Base Current | IB | 200 | mA | |
| Thermal Characteristics | ||||
| Collector Power Dissipation (Note 5) | PD | 1 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient Air (Note 5) | RJA | 125 | C/W | @TA = +25C |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 16 | C/W | @TA = +25C |
| Thermal Resistance, Junction to Leads (Note 7) | RJL | 10.01 | C/W | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 120 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 8) | BVCEO | 100 | V | IC = 1mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cutoff Current | ICBO | 100 | nA | VCB = 100V |
| Emitter Cutoff Current | IEBO | 100 | nA | VEB = 5V |
| Collector Cutoff Current (VCE = 100V) | ICES | 100 | nA | VCES = 100V |
| DC Current Transfer Ratio (Note 8) | hFE | 100 - 300 | IC = 1mA, VCE = 10V | |
| DC Current Transfer Ratio (Note 8) | hFE | 60 - 200 | IC = 250mA, VCE = 10V | |
| DC Current Transfer Ratio (Note 8) | hFE | 30 - 100 | IC = 500mA, VCE = 10V | |
| DC Current Transfer Ratio (Note 8) | hFE | 20 - 60 | IC = 1A, VCE = 10V | |
| Collector-Emitter Saturation Voltage (Note 8) | VCE(sat) | 0.3 | V | IC = 500mA, IB = 50mA |
| Collector-Emitter Saturation Voltage (Note 8) | VCE(sat) | 0.6 | V | IC = 1A, IB = 100mA |
| Base-Emitter Saturation Voltage (Note 8) | VBE(sat) | 1.15 | V | IC = 1A, IB = 100mA |
| Base-Emitter Turn-On Voltage (Note 8) | VBE(on) | 1.0 | V | IC = 1A, VCE = 10V |
| Transitional Frequency | fT | 150 | MHz | IC = 50mA, VCE = 10V, f = 100MHz |
| Output Capacitance | Cobo | 10 | pF | VCB = 10V, f = 1MHz |
2412251004_DIODES-FCX493TA_C151570.pdf
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