Small Signal Transistor 65V NPN Matched Pair Diodes BCM846BS-7 SOT363 Package for Automated Insertion
Key Attributes
Model Number:
BCM846BS-7
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
200@2mA,5V
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Mfr. Part #:
BCM846BS-7
Package:
SOT-363
Product Description
Product Overview
The BCM846BS is a 65V NPN matched pair small signal transistor in an ultra-small SOT363 surface mount package. It offers current gain matching and base-emitter voltage matching, making it ideally suited for automated insertion. This device is designed for switching and AF amplifier applications and is AEC-Q101 qualified for high reliability. It is also totally lead-free, fully RoHS compliant, and halogen and antimony-free, qualifying as a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Origin: Not specified
- Material: Molded Plastic, "Green" Molding Compound
- Color: Not specified
- Certifications: AEC-Q101, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 80 | V | |
| Collector-Emitter Voltage | VCEO | 65 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 100 | mA | |
| Peak Collector Current | ICM | 200 | mA | |
| Peak Base Current | IBM | 200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 200 | mW | @TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 625 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -65 to +150 | C | |
| ESD Ratings (Note 6) | ||||
| Electrostatic Discharge Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge Machine Model | ESD MM | 400 | V | |
| Electrical Characteristics (@TA = +25C, unless otherwise specified.) | ||||
| Collector-Base Breakdown Voltage | BVCBO | 80 | V | IC = 100A, IB = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | 65 | V | IC = 10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100A, IC = 0 |
| DC Current Gain | hFE | 200450 | VCE = 5V, IC = 2mA | |
| DC Current Gain Matching | hFE1/hFE2 | 0.91.1 | VCE = 5V, IC = 2mA | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | 100400 mV | IC = 10mA, IB = 0.5mA; IC = 100mA, IB = 5mA | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 755 mV | IC = 10mA, IB = 0.5mA | |
| 905 mV | IC = 100mA, IB = 5mA | |||
| Base-Emitter Voltage | VBE(ON) | 610710 | mV | VCE = 5V, IC = 2mA |
| Base-Emitter Voltage Matching | VBE1(ON) - VBE2(ON) | -22 | mV | VCE = 5V, IC = 2mA |
| Collector-Cutoff Current | ICBO | 15 nA | VCB = 40V | |
| 5 A | VCB = 40V, TA = +125C | |||
| Emitter-Cutoff Current | IEBO | 20 nA | VEB = 5V, IC = 0 | |
| Gain Bandwidth Product | fT | 100 | MHz | VCE = 5V, IC = 10mA, f = 100MHz |
| Collector-Base Capacitance | CCBO | 23 | pF | VCB = 10V, f = 1MHz |
| Emitter-Base Capacitance | CEBO | 11 | pF | VEB = 0.5V, f = 1MHz |
2308101659_DIODES-BCM846BS-7_C5248627.pdf
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