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quality DIODES RTT410 surface mount bridge rectifier rated at 1000V PRV for AC to DC full wave rectification factory
quality DIODES RTT410 surface mount bridge rectifier rated at 1000V PRV for AC to DC full wave rectification factory

DIODES RTT410 surface mount bridge rectifier rated at 1000V PRV for AC to DC full wave rectification

Key Attributes
Model Number: RTT410
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.3V@4A
Current - Rectified:
4A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
RTT410
Package:
SMD
Product Description

Product Overview

The RTT410 is a 4A surface mount fast glass-passivated bridge rectifier designed for AC to DC full wave rectification. It is suitable for various applications including SMPS, LED lighting, adapter, battery charger, home appliances, office equipment, and telecommunication systems. Key features include a glass-passivated die construction, EMI design-friendly filter rectifier, compact and thin profile, low forward voltage drop for improved efficiency, high current and surge capability, and robust construction. This device is rated at 1000V PRV and is lead-free, RoHS compliant, halogen and antimony free ("Green" device).

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type Marking Code: RTT410
  • Manufacturer's Code Marking: Green
  • Case Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Lead Free Plating (Matte Tin Finish)
  • Polarity: As Marked on Body
  • Certifications: RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. "Green" Device (Note 3)
  • Automotive Applications: For automotive applications requiring specific change control (e.g., AEC-Q100/101/200, PPAP capable, IATF 16949 certified facilities), please contact Diodes representative.

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Peak Repetitive Reverse VoltageVRRM1000V
Working Peak Reverse VoltageVRWM1000V
DC Blocking VoltageVR1000V
Average Rectified Output CurrentIO4A@ Tc = +100C
Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated LoadIFSM100A
I2t Rating for Fusing (1ms < t < 8.3ms)I2t41.5A2s
Typical Thermal Resistance, Junction to Lead (Per Element)RJL8C/W(Note 5)
Typical Thermal Resistance, Junction to Case (Per Element)RJC5C/W(Note 5)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C
Reverse Breakdown Voltage (Per Element)V(BR)R1000VMin, IR = 5A (Note 6)
Forward Voltage (Per Element)VF1.1 / 1.3VTyp, IF = 4A, TA = +25C / +125C (Note 7)
Leakage Current (Per Element)IR5 / 200ATyp, VR = 1000V, TA = +25C / +125C (Note 6)
Total Capacitance (Per Element)CT42pFTyp, VR = 4V, f = 1.0MHz
Reverse Recovery TimetRR250nsTyp, IF = 0.5A, IRR = 0.25A, IR = 1.0A

2308101556_DIODES-RTT410_C5245092.pdf

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