automotive relay driver DIODES DRDNB16W-7 with green device construction and AEC Q100 certification
Key Attributes
Model Number:
DRDNB16W-7
Product Custom Attributes
Output Voltage(VO(on)):
300mV
Input Resistor:
1kΩ
Resistor Ratio:
-
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DRDNB16W-7
Package:
SOT-363
Product Description
Diodes Incorporated DRD (xxxx) W Complex Array for Relay Drivers
The DRD (xxxx) W is a complex array designed for relay driver applications. It integrates one transistor and one switching diode into a single package, offering a compact and efficient solution. This device is epitaxially planarly constructed and is fully RoHS compliant, halogen and antimony free, making it a "Green" device. It is suitable for automotive applications requiring specific change control, with parts qualified to AEC-Q100/101/200 and manufactured in IATF 16949 certified facilities.
Product Attributes
- Brand: Diodes Incorporated
- Construction: Epitaxial Planar Die
- Material: Molded Plastic. "Green" Molding Compound.
- Color: "Green" Device
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free.
- Automotive Qualification: Available for AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities (contact Diodes representative).
Technical Specifications
| Device | Type | Max Collector-Emitter Voltage (VCEO) | Max Collector Current (IC) | Max Reverse Voltage (VRM) | Max Forward Current (IFM) | Package | Ordering Information |
|---|---|---|---|---|---|---|---|
| DRDP006W | PNP Transistor | -60V | -600mA | N/A | N/A | SOT-363 | DRDP006W-7 |
| DRDNB16W | Pre-Biased NPN Transistor | N/A | 600mA | N/A | N/A | SOT-363 | DRDNB16W-7 |
| Switching Diode (integrated) | Diode | N/A | N/A | 100V | 500mA | SOT-363 | N/A |
Additional Technical Data
| Characteristic | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| DRDP006W PNP Transistor | DC Current Gain | 100-300 | IC = -150mA, VCE = -10V | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.4 | V | IC = -150mA, IB = -15mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | -60 | V | IC = -10A, IE = 0 |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | -60 | V | IC = -10mA, IB = 0 |
| Collector Cutoff Current | ICBO | -10 | nA | VCB = -50V, IE = 0 |
| Gain-Bandwidth Product | fT | 200 | MHz | VCE = -20V, IC = -50mA, f = 100MHz |
| DRDNB16W Pre-Biased NPN Transistor | Input Voltage (Off) | 0.3 | V | VCC = 5V, IO = 100A |
| Input Voltage (On) | 2.0 | V | VO = 0.3V, IO = 20mA | |
| Output Voltage (On) | 0.3 | V | IO/Il = 50mA/2.5mA | |
| Input Current | 7.2 | mA | VI = 5V | |
| DC Current Gain | 56 | VO = 5V, IO = 50mA | ||
| Switching Diode | Reverse Breakdown Voltage | 75 | V | IR = 10A |
| Forward Voltage | 0.62-1.25 | V | IF = 5.0mA to 150mA | |
| Reverse Current | 2.5-50 | A | VR = 75V | |
| Reverse Recovery Time | 4.0 | ns | IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 |
2412251000_DIODES-DRDNB16W-7_C117854.pdf
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