Small Signal Transistor Diodes MMBT3904-7-F 40V NPN SOT23 Package RoHS Compliant Medium Power Device
Key Attributes
Model Number:
MMBT3904-7-F
Product Custom Attributes
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
310mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904-7-F
Package:
SOT-23
Product Description
MMBT3904 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23
The MMBT3904 is a 40V NPN small signal transistor designed for medium power amplification and switching applications. It offers a complementary PNP type (MMBT3906) and is available in a space-saving SOT23 package. This device is lead-free, RoHS compliant, and halogen/antimony-free, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Package Material: Molded Plastic, "Green" Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Complementary PNP Type: MMBT3906
- Automotive-Compliant Part: Available under separate datasheet (MMBT3904Q)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6 | V | |
| Collector Current | IC | 200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 310 | mW | @TA = +25C, on minimum recommended pad layout |
| Power Dissipation (Note 6) | PD | 350 | mW | @TA = +25C, on 15 mm x 15 mm copper |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 403 | C/W | @TA = +25C, on minimum recommended pad layout |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 357 | C/W | @TA = +25C, on 15 mm x 15 mm copper |
| Thermal Resistance, Junction to Leads (Note 7) | RJL | 350 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 10A, IE = 0 |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCEO | 40 | V | IC = 10mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | 6.0 | V | IE = 10A, IC = 0 |
| Collector Cut-Off Current | ICEX | 50 | nA | VCE = 30V, VEB(off) = 3.0V |
| Base Cut-Off Current | IBL | 50 | nA | VCE = 30V, VEB(off) = 3.0V |
| Emitter Base Cut-Off Current | IEBO | 50 | nA | VEB = 6V |
| Collector-Base Cut-Off Current | ICBO | 50 | nA | VCB = 48V |
| DC Current Gain | hFE | 40-300 | IC = 100A to 100mA, VCE = 1.0V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.20 - 0.30 | V | IC = 10mA to 50mA, IB = 1.0mA to 5.0mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.65 - 0.95 | V | IC = 10mA to 50mA, IB = 1.0mA to 5.0mA |
| Output Capacitance | COBO | 4.0 | pF | VCB = 5.0V, f = 1.0MHz, IE = 0 |
| Input Capacitance | CIBO | 8.0 | pF | VEB = 0.5V, f = 1.0MHz, IC = 0 |
| Current Gain-Bandwidth Product | fT | 300 | MHz | VCE = 20V, IC = 10mA, f = 100MHz |
| Switching Characteristics | ||||
| Delay Time | td | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA |
| Rise Time | tr | 35 | ns | VCC = 3.0V, IC = 10mA, VBE(OFF) = - 0.5V, IB1 = 1.0mA |
| Storage Time | ts | 200 | ns | VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA |
| Fall Time | tf | 50 | ns | VCC = 3.0V, IC = 10mA, IB1 = IB2 = 1.0mA |
2412251154_DIODES-MMBT3904-7-F_C94514.pdf
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