DIODES ZXTN2010Z 60V NPN Transistor SOT89 Package Low Saturation Voltage and High Continuous Current
Key Attributes
Model Number:
ZXTN2010ZTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
2.1W
Transition Frequency(fT):
130MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
5A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN2010ZTA
Package:
SOT-89
Product Description
Diodes Incorporated ZXTN2010Z 60V NPN Low Saturation Transistor
The Diodes Incorporated ZXTN2010Z is a 60V NPN low saturation transistor in a SOT89 package, designed for high current applications. It features a high continuous current capability of 5A, a low equivalent on-resistance with RSAT of 30m, and a low saturation voltage of VCE(SAT) < 65mV @ IC = 1A. The transistor also offers specified hFE up to 10A for high current gain hold-up. It is a complementary PNP type to the ZXTP2012Z and is available as a totally lead-free, fully RoHS compliant, and halogen/antimony-free "Green" device. Applications include emergency lighting circuits, motor driving, backlight inverters, power switches, and gate-driving MOSFETs and IGBTs.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT89
- Package Material: Molded Plastic, "Green" Molding Compound
- Lead Finish: Matte Tin Plated
- Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | 150 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | VCEO | 60 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | VEBO | 7 | V | IE = 100A |
| Base Current | IB | 2 | A | |
| Continuous Collector Current | IC | 5 | A | |
| Peak Pulse Current | ICM | 20 | A | |
| Power Dissipation (Note 5) | PD | 1.5 | W | |
| Power Dissipation (Note 6) | PD | 2.1 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 83 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 60 | C/W | |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 5.3 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| DC Current Transfer Ratio (hFE) | hFE | 100-200 | IC = 10mA, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 100-300 | IC = 2A, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 55-105 | IC = 5A, VCE = 1V | |
| DC Current Transfer Ratio (hFE) | hFE | 20-40 | IC = 10A, VCE = 1V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | < 65 | mV | IC = 1A, IB = 50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 970-1100 | mV | IC = 6A, IB = 300mA |
| Base-Emitter Turn-on Voltage | VBE(on) | 910-1050 | mV | IC = 6A, VCE = 1V |
| Transitional Frequency | fT | 130 | MHz | IC = 100mA, VCE = 10V, f = 50MHz |
| Output Capacitance | COBO | 31 | pF | VCB = 10V, f = 1MHz |
| Switching Time (turn-on) | ton | 42 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA |
| Switching Time (turn-off) | toff | 760 | ns | VCC = 10V, IC = 1A, IB1 = -IB2 = 100mA |
2412251000_DIODES-ZXTN2010ZTA_C122575.pdf
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