Small Signal Dual PNP Transistor DIODES DMMT5401-7-F with Lead Free RoHS Compliant Green Molding Compound
Key Attributes
Model Number:
DMMT5401-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
300MHz
Type:
PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
150V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
DMMT5401-7-F
Package:
SOT-26(SC74R)
Product Description
Product Overview
The DMMT5401 is a 150V dual PNP small signal surface mount transistor designed for medium power amplification and switching applications. It offers 2% matched tolerance for hFE, VCE(SAT), and VBE(SAT), providing excellent performance consistency. Housed in a compact SOT26 (SC74R) package, it occupies half the footprint of two individual SOT23 transistors, making it ideal for space-constrained designs. This device features an epitaxial planar die construction and is manufactured using a "Green" molding compound, making it totally lead-free, fully RoHS compliant, and halogen and antimony free.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT26 (SC74R)
- Material: Molded Plastic ("Green" Molding Compound)
- Certifications: Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | -160 | V | |
| Collector-Emitter Voltage | VCEO | -150 | V | |
| Emitter-Base Voltage | VEBO | -5.0 | V | |
| Continuous Collector Current | IC | -200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation | PD | 300 | mW | (@TA = +25C, Note 5 & 6) |
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Collector-Base Breakdown Voltage | BVCBO | -160 | V | IC = -100A, IE = 0 |
| Collector-Emitter Breakdown Voltage | BVCEO | -150 | V | IC = -1mA, IB = 0 |
| Emitter-Base Breakdown Voltage | BVEBO | -5 | V | IE = -10A, IC = 0 |
| Collector-Base Cutoff Current | ICBO | -50 | nA / A | VCB = -120V, IE = 0 (TA = +100C) |
| Emitter-Base Cutoff Current | IEBO | -50 | nA | VEB = -3V, IB = 0 |
| DC Current Gain | hFE | 50 - 240 | IC = -1mA, VCE = -5V; IC = -10mA, VCE = -5V; IC = -50mA, VCE = -5V (Note 8) | |
| Collector-Emitter Saturation Voltage | VCE(SAT) | -0.2 / -0.5 | V | IC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | -1 | V | IC = -10mA, IB = -1mA; IC = -50mA, IB = -5mA |
| Current Gain-Bandwidth Product | fT | 100 - 300 | MHz | VCE = -10V, IC = -10mA, f = 100MHz |
| Output Capacitance | COBO | 6 | pF | VCB = -10V, f = 1.0MHz, IE = 0mA |
| Small Signal Current Gain | hfe | 40 - 200 | VCE = -10V, IC = -1mA, f = 1.0kHz | |
| Noise Figure | NF | 8 | dB | VCE = -5V, IC = -200A, RS = 10, f = 1.0kHz |
1810261910_DIODES-DMMT5401-7-F_C154733.pdf
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