High Current PNP Medium Power Low Saturation Transistor DIODES ZX5T951GQTC Designed for Automotive
Key Attributes
Model Number:
ZX5T951GQTC
Product Custom Attributes
Current - Collector Cutoff:
20nA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
120MHz
Type:
PNP
Current - Collector(Ic):
5.5A
Collector - Emitter Voltage VCEO:
60V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZX5T951GQTC
Package:
SOT-223
Product Description
Product Overview
The ZX5T951GQ is a 60V PNP medium power, low saturation bipolar junction transistor (BJT) designed to meet the stringent requirements of automotive applications. It offers high continuous collector current, peak pulse current, and low saturation voltage, making it suitable for various power switching and driving applications.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: PNP Medium Power Low Saturation Transistor
- Package: SOT223
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101 Qualified, PPAP Capable, IATF16949 Certified Facilities
- Finish: Lead-Free, RoHS Compliant, Halogen- and Antimony-Free ("Green" Device)
- Flammability Rating: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Emitter Breakdown Voltage | BVCEO | -60 | V | IC = -10mA |
| High Continuous Collector Current | IC | -5.5 | A | |
| Peak Pulse Current | ICM | -15 | A | |
| Low Saturation Voltage | VCE(sat) | < -70 | mV | @ -1A |
| Low Equivalent On-Resistance | RSAT | 39 | m | |
| Static Forward Current Transfer Ratio | hFE | 100 - 250 | IC = -10mA, VCE = -1V | |
| 100 - 200 | IC = -2A, VCE = -1V | |||
| 45 - 90 | IC = -5A, VCE = -1V | |||
| 10 - 25 | IC = -10A, VCE = -1V | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -15 to -25 | mV | IC = -100mA, IB = -10mA |
| -55 to -70 | mV | IC = -1A, IB = -100mA | ||
| -90 to -120 | mV | IC = -2A, IB = -200mA | ||
| -195 to -250 | mV | IC = -5A, IB = -500mA | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1030 to -1150 | mV | IC = -5A, IB = -500mV |
| Base-Emitter Turn-On Voltage | VBE(on) | -920 to -1020 | mV | IC = -5A, VCE = -1V |
| Output Capacitance | Cobo | 48 | pF | VCB = -10V, f = 1MHz |
| Transition Frequency | fT | 120 | MHz | VCE = -10V, IC = -100mA, f = 50MHz |
| Switching Time (Turn-on) | ton | 39 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
| Switching Time (Turn-off) | toff | 370 | ns | VCC = -10V, IC = -1A, IB1 = -IB2 = -100mA |
| Power Dissipation | PD | 3.0 | W | @ TA = +25C (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 42 | C/W | @ TA = +25C (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
Applications
- DC-DC Converters
- MOSFET & IGBT Gate Drivers
- Charging Circuits
- Power Switches
- Motor Control
2412251117_DIODES-ZX5T951GQTC_C5249279.pdf
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