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quality NPN Low Saturation Transistor DIODES ZXTN07045EFFTA 45V SOT23F Package AECQ101 Qualified Green Device factory
quality NPN Low Saturation Transistor DIODES ZXTN07045EFFTA 45V SOT23F Package AECQ101 Qualified Green Device factory

NPN Low Saturation Transistor DIODES ZXTN07045EFFTA 45V SOT23F Package AECQ101 Qualified Green Device

Key Attributes
Model Number: ZXTN07045EFFTA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
50nA
Pd - Power Dissipation:
1.5W
Transition Frequency(fT):
190MHz
Type:
NPN
Current - Collector(Ic):
4A
Collector - Emitter Voltage VCEO:
45V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
ZXTN07045EFFTA
Package:
SOT-23F
Product Description

Product Overview

The ZXTN07045EFF is a 45V NPN low saturation transistor designed for applications demanding high gain and very low saturation voltage. Its SOT23F package offers a lower profile and higher dissipation compared to standard SOT23, making it ideal for high power density applications. This device is AEC-Q101 qualified, lead-free, and halogen/antimony-free (Green Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Complementary PNP Type: ZXTP07040DFF
  • Certifications: AEC-Q101 Qualified
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Package: SOT23F
  • Case Material: Molded Plastic (Green Molding Compound)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
  • Weight: 0.012 grams (Approximate)

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Collector-Base Breakdown VoltageBVCBO45VIC = 100A
Collector-Emitter Breakdown Voltage (Base Open)BVCEO45VIC = 10mA
Emitter-Base Breakdown VoltageBVEBO7VIE = 100A
Emitter-Collector Breakdown Voltage (Reverse Blocking)BVECX6VIE = 100A; RBC < 1k or -0.25V < VBC < 0.25V
Emitter-Collector Breakdown Voltage (Base Open)BVECO6VIE = 100A
Collector-Base Cut-Off CurrentICBO<1nAVCB = 35V
Collector-Base Cut-Off CurrentICBO20AVCB = 35V, TA = +100C
Emitter-Base Cut-Off CurrentIEBO<1nAVEB = 5.6V
Static Forward Current Transfer RatiohFE400IC = 1A, VCE = 2V
Static Forward Current Transfer RatiohFE500IC = 100mA, VCE = 2V
Static Forward Current Transfer RatiohFE250IC = 2A, VCE = 2V
Static Forward Current Transfer RatiohFE70IC = 4A, VCE = 2V
Collector-Emitter Saturation VoltageVCE(sat)80mVIC = 1A, IB = 100mA
Collector-Emitter Saturation VoltageVCE(sat)45mVIC = 0.1A, IB = 0.5mA
Collector-Emitter Saturation VoltageVCE(sat)160mVIC = 1A, IB = 5mA
Collector-Emitter Saturation VoltageVCE(sat)200mVIC = 2A, IB = 20mA
Collector-Emitter Saturation VoltageVCE(sat)230mVIC = 4A, IB = 200mA
Base-Emitter Saturation VoltageVBE(sat)1000mVIC = 4A, IB = 200mA
Base-Emitter On VoltageVBE(on)875mVIC = 4A, VCE = 2V
Transition FrequencyfT150MHzIC = 50mA, VCE = 5V, f = 50MHz
Input CapacitanceCibo225pFVEB = 0.5V, f = 1MHz
Output CapacitanceCobo18.4pFVCB = 10V, f = 1MHz
Delay Timetd22.3nsVCC = 10V, IC = 500mA, IB1 = IB2 = 50mA
Rise Timetr10.6nsVCC = 10V, IC = 500mA, IB1 = IB2 = 50mA
Storage Timets613nsVCC = 10V, IC = 500mA, IB1 = IB2 = 50mA
Fall Timetf146nsVCC = 10V, IC = 500mA, IB1 = IB2 = 50mA
Continuous Collector CurrentIC4A@TA = +25C
Peak Pulse CurrentICM6A@TA = +25C
Base CurrentIB1A@TA = +25C
Power DissipationPD1.50W(Note 7) @TA = +25C
Thermal Resistance, Junction to AmbientRJA83C/W(Note 7) @TA = +25C
Thermal Resistance, Junction to LeadRJL43.77C/W(Note 9)
Operating and Storage Temperature RangeTJ, TSTG-55 to +150C

1912111437_DIODES-ZXTN07045EFFTA_C460133.pdf

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