High current 2A NPN transistor DIODES FZT653TA with 100V breakdown voltage and low saturation voltage
Key Attributes
Model Number:
FZT653TA
Product Custom Attributes
Emitter-Base Voltage(Vebo):
7V
Current - Collector Cutoff:
10uA
Pd - Power Dissipation:
3W
Transition Frequency(fT):
175MHz
Type:
NPN
Number:
1 NPN
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
FZT653TA
Package:
SOT-223
Product Description
Product Overview
The FZT653 is a 100V NPN high-performance transistor in a SOT223 package. It offers a high continuous current of 2A and a peak pulse current of 6A, with a low saturation voltage of less than 300mV @ 1A. This device is lead-free, RoHS compliant, and halogen/antimony-free, making it a "Green" device. It is qualified to AEC-Q101 standards for high reliability, with an automotive-compliant version available under a separate datasheet (FZT653Q).
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT223
- Material: Molded Plastic ("Green" Molding Compound)
- Certifications: RoHS Compliant, AEC-Q101 Qualified, Halogen and Antimony Free ("Green" Device)
- Complementary PNP Type: FZT753
- Automotive Version: FZT653Q (Available under separate datasheet)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Collector-Base Breakdown Voltage | BVCBO | 120 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage | BVCBO | 100 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE = 100A |
| Collector Cut-Off Current | ICBO | < 1 | nA | VCB = 100V |
| Emitter Cut-Off Current | IEBO | < 1 | nA | VEB = 5.6V |
| Collector-Emitter Saturation Voltage | VCE(SAT) | < 0.3 | V | IC = 1A, IB = 100mA |
| Collector-Emitter Saturation Voltage | VCE(SAT) | < 0.5 | V | IC = 2A, IB = 200mA |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1.25 | V | IC = 1A, IB = 100mA |
| Base-Emitter Turn-On Voltage | VBE(ON) | 1.0 | V | IC = 1A, VCE = 2V |
| DC Current Gain | hFE | 70 - 200 | - | IC = 50mA, VCE = 2V |
| DC Current Gain | hFE | 100 - 300 | - | IC = 500mA, VCE = 2V |
| DC Current Gain | hFE | 55 - 110 | - | IC = 1A, VCE = 2V |
| DC Current Gain | hFE | 25 - 55 | - | IC = 2A, VCE = 2V |
| Current Gain-Bandwidth Product | fT | 140 - 175 | MHz | VCE = 5V, IC = 100mA, f = 100MHz |
| Switching Times (Turn-On) | tON | 80 | ns | IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA |
| Switching Times (Turn-Off) | tOFF | 1200 | ns | IC = 500mA, VCC = 10V, IB1 = -IB2 = 50mA |
| Output Capacitance | COBO | 30 | pF | VCB = 10V, f = 1MHz |
| Continuous Collector Current | IC | 2 | A | |
| Peak Pulse Current | ICM | 6 | A | |
| Power Dissipation (Note 5) | PD | 3 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 41.7 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V |
2412251006_DIODES-FZT653TA_C155223.pdf
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