Medium Power Amplification NPN Transistor Diodes MMBT4401-7-F SOT23 Package Molded Plastic Compound
Key Attributes
Model Number:
MMBT4401-7-F
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
250MHz
Type:
NPN
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT4401-7-F
Package:
SOT-23
Product Description
Product Overview
The MMBT4401 is a 40V NPN Small Signal Transistor in a SOT23 package. It is constructed with Epitaxial Planar Die and is ideal for medium power amplification and switching applications. This device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, making it a "Green" device. A complementary PNP type, the MMBT4403, is also available.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic Green Compound
- Certifications: Fully RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. Green Device (Note 3)
- Automotive Compliant Part: Available under separate datasheet (MMBT4401Q)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-Base Voltage | VCBO | 60 | V | |
| Collector-Emitter Voltage | VCEO | 40 | V | |
| Emitter-Base Voltage | VEBO | 6.0 | V | |
| Collector Current | IC | 600 | mA | |
| Peak Collector Current | ICM | 1 | A | |
| Peak Base Current | IBM | 200 | mA | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 310 | mW | @ TA = +25C |
| Power Dissipation (Note 6) | PD | 350 | mW | @ TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 403 | C/W | @ TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 357 | C/W | @ TA = +25C |
| Thermal Resistance, Junction to Leads (Note 7) | RJL | 350 | C/W | |
| Thermal Resistance, Junction to Case (Note 5) | RJC | 120 | C/W | @ TA = +25C |
| Operating and Storage Temperature Range | TJ,TSTG | -55 to +150 | C | |
| ESD Ratings | ||||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4,000 | V | JEDEC Class 3A |
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C |
| Electrostatic Discharge Charged Device Model | ESD CDM | 1,000 | V | JEDEC Class C3 |
| OFF CHARACTERISTICS | ||||
| Collector-Base Breakdown Voltage | BVCBO | 60 | V | IC = 100A |
| Collector-Emitter Breakdown Voltage (Note 9) | BVCEO | 40 | V | IC = 10mA |
| Emitter-Base Breakdown Voltage | BVEBO | 6 | V | IE = 100A |
| Collector Cutoff Current | ICEX | 100 | nA | VCE = 35V, VEB(off) = 0.4V |
| Base Cutoff Current | IBL | 100 | nA | VCE = 35V, VEB(off) = 0.4V |
| ON CHARACTERISTICS (Note 9) | ||||
| DC Current Gain | hFE | 20 - 300 | IC = 100A to 500mA, VCE = 1V to 2V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | 0.4 - 0.75 | V | IC = 150mA, IB = 15mA; IC = 500mA, IB = 50mA |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.75 - 1.2 | V | IC = 150mA, IB = 15mA; IC = 500mA, IB = 50mA |
| SMALL SIGNAL CHARACTERISTICS | ||||
| Output Capacitance | Ccb | 6.5 | pF | VCB = 5V, f = 1MHz |
| Input Capacitance | Ceb | 30 | pF | VEB = 0.5V, f = 1MHz |
| Input Impedance | hie | 1 - 15 | k | VCE = 10V, IC = 1mA, f = 1kHz |
| Voltage Feedback Ratio | hre | 8 x 10-4 | VCE = 10V, IC = 1mA, f = 1kHz | |
| Small Signal Current Gain | hfe | 40 - 500 | VCE = 10V, IC = 1mA, f = 1kHz | |
| Output Admittance | hoe | 1 - 30 | S | VCE = 10V, IC = 1mA, f = 1kHz |
| Current Gain-Bandwidth Product | fT | 250 | MHz | VCE = 10V, IC = 20mA, f = 100MHz |
| SWITCHING CHARACTERISTICS | ||||
| Delay Time | td | 15 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2V, IB1 = 15mA |
| Rise Time | tr | 20 | ns | VCC = 30V, IC = 150mA, VBE(off) = 2V, IB1 = 15mA |
| Storage Time | ts | 225 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA |
| Fall Time | tf | 30 | ns | VCC = 30V, IC = 150mA, IB1 = -IB2 = 15mA |
2412251005_DIODES-MMBT4401-7-F_C151826.pdf
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