DIODES UMC4N 7 dual complementary pre biased transistor in ultra small SOT353 package for board layout
Product Overview
The UMC4N is a dual complementary pre-biased transistor in an ultra-small surface mount package, designed for automated assembly. It simplifies circuit design and reduces board space, offering a "Green" device that is totally lead-free and fully RoHS compliant. Qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT353
- Material: Molded Plastic, "Green" Molding Compound
- Certifications: AEC-Q101
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
| Pre-Biased NPN Transistor (Q1) | ||||||
| Supply Voltage | VCC | 50 | V | |||
| Input Voltage | VIN | -10 | 40 | V | ||
| Output Current | IO | 30 | mA | |||
| Collector Current | IC | 100 | mA | |||
| Input Voltage (OFF) | VI(OFF) | 0.5 | V | VCC = 5V, IO = 100A | ||
| Input Voltage (ON) | VI(ON) | 3 | V | VO = 0.3V, IO = 2mA | ||
| Output Voltage (ON) | VO(ON) | 0.1 | 0.3 | V | IO / II = 10mA/0.5 mA | |
| Input Current | II | 0.18 | mA | VI = 5V | ||
| Output Current (OFF) | IO(OFF) | 0.5 | A | VCC = 50V, VI = 0V | ||
| DC Current Gain | GI | 68 | VO = 5V, IO = 5mA | |||
| Gain-Bandwidth Product | fT | 250 | MHz | VCE = 10V, IE = -5mA, f = 100MHz | ||
| Input Resistance | R1 | 32.9 | 47 | 61.1 | k | |
| Resistance Ratio | R2/R1 | 0.8 | 1 | 1.2 | ||
| Pre-Biased PNP Transistor (Q2) | ||||||
| Supply Voltage | VCC | -50 | V | |||
| Input Voltage | VIN | -40 | 6 | V | ||
| Output Current | IO | -100 | mA | |||
| Collector Current | IC | -100 | mA | |||
| Input Voltage (OFF) | VI(OFF) | -0.3 | V | VCC = -5V, IO = -100A | ||
| Input Voltage (ON) | VI(ON) | -1.4 | V | VO = -0.3V, IO = -1mA | ||
| Output Voltage (ON) | VO(ON) | -0.1 | -0.3 | V | IO/ II = -5mA/-0.25 mA | |
| Input Current | II | -0.88 | mA | VI = -5V | ||
| Output Current (OFF) | IO(OFF) | -0.5 | A | VCC = -50V, VI = 0V | ||
| DC Current Gain | GI | 68 | VO = -5V, IO = -5mA | |||
| Gain-Bandwidth Product | fT | 250 | MHz | VCE = -10V, IE = 5mA, f = 100MHz | ||
| Input Resistance | R1 | 7 | 10 | 13 | k | |
| Resistance Ratio | R2/R1 | 3.7 | 4.7 | 5.7 | ||
| Thermal Characteristics | ||||||
| Power Dissipation | PD | 150 | mW | @TA = +25C (Note 5) | ||
| Thermal Resistance, Junction to Ambient Air | RJA | 833 | C/W | @TA = +25C (Note 5) | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
2103091835_DIODES-UMC4N-7_C780907.pdf
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