DIODES DMP4065S 7 40V P Channel MOSFET Designed for Battery Charging and DC DC Converter Applications
Key Attributes
Model Number:
DMP4065S-7
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
3.4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
100mΩ@4.5V,3.3A
Gate Threshold Voltage (Vgs(th)):
-
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 P-Channel
Output Capacitance(Coss):
88pF
Input Capacitance(Ciss):
587pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12.2nC@10V
Mfr. Part #:
DMP4065S-7
Package:
SOT-23
Product Description
Product Overview
The DMP4065S is a 40V P-Channel Enhancement Mode MOSFET designed to offer minimized on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high-efficiency power management applications, including battery charging, general power management functions, DC-DC converters, and portable power adaptors. It features low input capacitance, fast switching speed, and low input/output leakage. The device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, and classified as a "Green" Device. An automotive-grade version (DMP4065SQ) is available for applications requiring specific change control and AEC-Q qualification.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic, Green Molding Compound
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to JEDEC standards for High Reliability.
- Compliance: EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3)
- Lead-Free: Yes
- Halogen-Free: Yes
- Antimony-Free: Yes
Technical Specifications
| Characteristic | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | BVDSS | -40 | V | TA = +25C |
| RDS(ON) Max | 80 | m | VGS = -10V | |
| RDS(ON) Max | 100 | m | VGS = -4.5V | |
| Continuous Drain Current Max | ID Max | -3.4 | A | TA = +25C |
| Continuous Drain Current Max | ID Max | -3.0 | A | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -40 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C |
| Continuous Drain Current (Note 5) | ID | -2.4 | A | VGS = -10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 5) | ID | -1.9 | A | VGS = -10V, Steady State, TA = +70C |
| Continuous Drain Current (Note 6) | ID | -3.4 | A | VGS = -10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | -2.7 | A | VGS = -10V, Steady State, TA = +70C |
| Pulsed Drain Current | IDM | -20 | A | |
| Thermal Characteristics | ||||
| Power Dissipation (Note 5) | PD | 0.72 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 171 | C/W | @TA = +25C |
| Power Dissipation (Note 6) | PD | 1.4 | W | @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 90 | C/W | @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | A | VDS = -40V, VGS = 0V, TJ = +25C |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -1.0 to -3.0 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 64 to 85 | m | VGS = -10V, ID = -4.2A |
| Static Drain-Source On-Resistance | RDS(ON) | 80 to 100 | m | VGS = -4.5V, ID = -3.3A |
| Diode Forward Voltage | VSD | -0.7 to -1.2 | V | VGS = 0V, IS = -1A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 587 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 88 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 40 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 4 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge (VGS = -4.5V) | Qg | 6.1 | nC | VDS = -20V, ID = -4.2A |
| Total Gate Charge (VGS = -10V) | Qg | 12.2 | nC | VDS = -20V, ID = -4.2A |
| Gate-Source Charge | Qgs | 1.8 | nC | VDS = -20V, ID = -4.2A |
| Gate-Drain Charge | Qgd | 2.4 | nC | VDS = -20V, ID = -4.2A |
| Turn-On Delay Time | tD(ON) | 3.6 | ns | VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6 |
| Turn-On Rise Time | tR | 2.9 | ns | VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6 |
| Turn-Off Delay Time | tD(OFF) | 36.3 | ns | VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6 |
| Turn-Off Fall Time | tF | 15.3 | ns | VDD = -15V, VGS = -10V, ID = -1.0A, RG = 6 |
| Mechanical Data | ||||
| Case | SOT23 | Standard | ||
| Case Material | Molded Plastic, Green Molding Compound | UL Flammability Classification Rating 94V-0 | ||
| Moisture Sensitivity | Level 1 | per J-STD-020 | ||
| Terminals Finish | Matte Tin Annealed over Copper Leadframe | Solderable per MIL-STD-202, Method 208 | ||
| Weight | 0.008 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | DMP4065S-7 | SOT23 (Standard), 3,000/Tape & Reel | ||
| Part Number | DMP4065S-13 | SOT23 (Standard), 10,000/Tape & Reel | ||
2412251014_DIODES-DMP4065S-7_C182476.pdf
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