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quality Discrete Dual NPN Transistor DIODES DDC144TU-7 with Current Limiting and Base Resistor Integration factory
quality Discrete Dual NPN Transistor DIODES DDC144TU-7 with Current Limiting and Base Resistor Integration factory

Discrete Dual NPN Transistor DIODES DDC144TU-7 with Current Limiting and Base Resistor Integration

Key Attributes
Model Number: DDC144TU-7
Product Custom Attributes
Output Voltage(VO(on)):
250mV
Input Resistor:
47kΩ
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DDC144TU-7
Package:
SOT-363
Product Description

Product Overview

The DDC144TU is a dual NPN transistor designed for logic switching applications, suitable for use with micro-controllers and comparators. It features integrated 47k Ohm base resistors, enabling control with higher supply voltages and providing built-in current limiting. These discrete NPN transistors can be utilized as part of a larger circuit or as standalone components, supporting a maximum continuous current of 100 mA.

Product Attributes

  • Brand: Diodes Incorporated
  • Certifications: Lead Free By Design/RoHS Compliant, "Green" Device
  • Material: Molded Plastic, "Green Molding" Compound

Technical Specifications

CharacteristicSymbolValueUnitTest Condition
Total Device Ratings
Power DissipationPd200mW@TA = 25C
Power Deration above 25CPder1.6mW / C
Output CurrentIout100mA
Junction Operation and Storage Temperature RangeTJ, TSTG-55 to +150C
Thermal Resistance, junction to ambientRJA625C/W@ TA = 25C (Ref: equivalent to only one heated junction)
Sub-Component Device: Discrete NPN Transistor (Q1, Q2) Ratings
Collector-Base VoltageVCBO50V@TA = 25C
Collector-Emitter VoltageVCEO50V@TA = 25C
Emitter-Base VoltageVEBO6V@TA = 25C
Collector Current (dc)IC(max)50mA@TA = 25C
Electrical Characteristics
Collector-Base Cut Off CurrentICBO100nAVCB = 50V, IE = 0
Collector-Emitter Cut Off CurrentICEO500nAVCE = 50V, IB = 0
Emitter-Base Cut Off CurrentIEBO500nAVEB = 5V, IC = 0
Collector-Base Breakdown VoltageV(BR)CBO50VIC = 50uA, IE = 0
Collector-Emitter Breakdown VoltageV(BR)CEO50VIC = 1 mA, IB = 0
Emitter-Base Breakdown VoltageV(BR)EBO6VIE = 50uA, IC = 0
DC Current GainhFE150-400VCE = 5V, IC = 1 mA
DC Current GainhFE150-400VCE = 5V, IC = 10 mA
DC Current GainhFE150-350VCE = 5V, IC = 25 mA
DC Current GainhFE150-300VCE = 5V, IC = 50 mA
DC Current GainhFE50-110VCE = 5V, IC = 100 mA
Collector-Emitter Saturation VoltageVCE(SAT)0.2-0.3VIC = 50mA, IB= 5mA
Output Voltage (equivalent to VCE(SAT) or VO(on))VOL0.2-0.25VdcVCC = 5V, VB = 2.5V, RL=10K
Input VoltageVI(ON)0.95VdcVO= 0.3V, IC= 2mA
Input CurrentIi19.2-28mAVI = 5V
Base-Emitter Turn-on VoltageVBE(ON)1.2VVCE = 5V, IC = 2mA
Base-Emitter Saturation VoltageVBE(SAT)1.6VIC = 200uA, IB = 20uA
Input Resistor (Base)R147K+/- 30%
Transition Frequency (gain-bandwidth product)fT250MHzVCE = 10V, IE = 5mA, f =100MHz
Collector Capacitance (Output Capacitance)CC5pFVCB = 10V, IE = 0, f = 1MHz

2210280930_DIODES-DDC144TU-7_C2760652.pdf

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