Diodes DMN2990UDJ 7 Dual N Channel Enhancement Mode MOSFET for DC DC Converters and Analog Switches
Key Attributes
Model Number:
DMN2990UDJ-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
450mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4Ω@1.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.8pF
Number:
2 N-Channel
Output Capacitance(Coss):
4pF
Input Capacitance(Ciss):
27.6pF
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
500pC@0V
Mfr. Part #:
DMN2990UDJ-7
Package:
SOT-963-6
Product Description
Product Overview
The Diodes Incorporated DMN2990UDJ is a new product dual N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. This MOSFET is ideal for general purpose interfacing switches, power management functions, DC-DC converters, and analog switches. It features a very low gate threshold voltage, low input capacitance, fast switching speed, and an ultra-small surface mount package.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: Dual N-Channel Enhancement Mode MOSFET
- Certifications: Qualified to AEC-Q101 Standards for High Reliability
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Package Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition | |
|---|---|---|---|---|---|
| Product Summary | |||||
| V(BR)DSS | V(BR)DSS | 20 | V | TA = 25C | |
| RDS(ON) Max @ VGS = 4.5V | RDS(ON) | 0.99 | TA = 25C | ||
| ID Max @ TA = 25C | ID | 450 | mA | VGS = 4.5V | |
| RDS(ON) Max @ VGS = 2.5V | RDS(ON) | 1.2 | TA = 25C | ||
| ID Max @ TA = 25C | ID | 400 | mA | VGS = 2.5V | |
| RDS(ON) Max @ VGS = 1.8V | RDS(ON) | 1.8 | TA = 25C | ||
| ID Max @ TA = 25C | ID | 330 | mA | VGS = 1.8V | |
| RDS(ON) Max @ VGS = 1.5V | RDS(ON) | 2.4 | TA = 25C | ||
| ID Max @ TA = 25C | ID | 300 | mA | VGS = 1.5V | |
| Maximum Ratings | |||||
| Drain-Source Voltage | VDSS | 20 | V | @TA = +25C | |
| Gate-Source Voltage | VGSS | 8 | V | @TA = +25C | |
| Continuous Drain Current (Note 7) VGS = 4.5V Steady State TA = +25C | ID | 450 | mA | ||
| Continuous Drain Current (Note 7) VGS = 4.5V Steady State TA = +70C | ID | 350 | mA | ||
| Continuous Drain Current (Note 7) VGS = 1.8V Steady State TA = +25C | ID | 330 | mA | ||
| Continuous Drain Current (Note 7) VGS = 1.8V Steady State TA = +70C | ID | 220 | mA | ||
| Pulsed Drain Current (Note 8) | IDM | 800 | mA | ||
| Thermal Characteristics | |||||
| Total Power Dissipation (Note 7) | PD | 350 | mW | @TA = +25C | |
| Thermal Resistance, Junction to Ambient | RJA | 360 | C/W | @TA = +25C | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 250A | |
| Zero Gate Voltage Drain Current @TC = +25C | IDSS | - | 50 | nA | VDS = 5V, VGS = 0V |
| Zero Gate Voltage Drain Current @TC = +25C | IDSS | - | 100 | nA | VDS = 16V, VGS = 0V |
| Gate-Source Leakage | IGSS | - | 100 | nA | VGS = 5V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 0.4 | 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance VGS = 4.5V, ID = 100mA | RDS(ON) | - | 0.99 | ||
| Static Drain-Source On-Resistance VGS = 2.5V, ID = 50mA | RDS(ON) | - | 1.2 | ||
| Static Drain-Source On-Resistance VGS = 1.8V, ID = 20mA | RDS(ON) | - | 1.8 | ||
| Static Drain-Source On-Resistance VGS = 1.5V, ID = 10mA | RDS(ON) | - | 2.4 | ||
| Static Drain-Source On-Resistance VGS = 1.2V, ID = 1mA | RDS(ON) | - | 2.0 | ||
| Forward Transfer Admittance | |Yfs| | 180 | mS | VDS = 10V, ID = 400mA | |
| Diode Forward Voltage (Note 8) | VSD | - | 1.0 | V | VGS = 0V, IS = 150mA |
| Dynamic Characteristics | |||||
| Input Capacitance | Ciss | - | 27.6 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | - | 4.0 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | - | 2.8 | pF | VDS = 16V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge | Qg | - | 0.5 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Source Charge | Qgs | - | 0.07 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Drain Charge | Qgd | - | 0.07 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Turn-On Delay Time | tD(ON) | - | 4.0 | ns | VDD = 10V, VGS = 4.5V, RL = 47, Rg = 10, ID = 200mA |
| Turn-On Rise Time | tR | - | 3.3 | ns | VDD = 10V, VGS = 4.5V, RL = 47, Rg = 10, ID = 200mA |
| Turn-Off Delay Time | tD(OFF) | - | 19.0 | ns | VDD = 10V, VGS = 4.5V, RL = 47, Rg = 10, ID = 200mA |
| Turn-Off Fall Time | tF | - | 6.4 | ns | VDD = 10V, VGS = 4.5V, RL = 47, Rg = 10, ID = 200mA |
| Mechanical Data | |||||
| Case | SOT963 | ||||
| Weight (Approximate) | 0.027 | grams | |||
| Package Outline Dimensions (SOT963) | |||||
| Dim | Min | Max | Typ | ||
| A | 0.40 | 0.50 | 0.45 | mm | |
| A1 | 0.00 | 0.05 | - | mm | |
| b | 0.10 | 0.20 | 0.15 | mm | |
| c | 0.120 | 0.180 | 0.150 | mm | |
| D | 0.95 | 1.05 | 1.00 | mm | |
| E | 0.95 | 1.05 | 1.00 | mm | |
| E1 | 0.75 | 0.85 | 0.80 | mm | |
| e | - | - | 0.35 | mm | |
| e1 | - | - | 0.70 | mm | |
| L1 | 0.05 | 0.15 | 0.10 | mm | |
| Suggested Pad Layout (SOT963) | |||||
| Dimensions | Value (in mm) | ||||
| C | 0.350 | ||||
| X | 0.200 | ||||
| Y | 0.200 | ||||
| Y1 | 1.100 | ||||
| Ordering Information | |||||
| Part Number | Case | Packaging | |||
| DMN2990UDJ-7 | SOT963 | 10K/Tape & Reel | |||
| DMN2990UDJ-7A | SOT963 | 10K/Tape & Reel | |||
1811141827_DIODES-DMN2990UDJ-7_C332298.pdf
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