Compact Lead Free Bridge Rectifier DIODES MB10S-13 Ideal for SMPS LED Lighting and Battery Chargers
Product Overview
The MB10S is an advanced information new product, a 0.8A surface mount glass passivated bridge rectifier. It is suitable for AC to DC bridge full wave rectification in applications such as SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a miniature package that saves PC board space, low leakage current, low forward voltage drop, and a lead-free, halogen- and antimony-free "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Compliance: RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Terminals: Lead Free Plating (Matte Tin Finish)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | |
| RMS Reverse Voltage | VR(RMS) | 700 | V | |
| Average Rectified Output Current | IO | 0.8 | A | @TA = +40C (Note 6) |
| Non-Repetitive Peak Forward Surge Current (8.3ms) | IFSM | 30 | A | Single Half Sine-Wave Superimposed on Rated Load |
| I2t Rating for Fusing (1ms < t < 8.3ms) | I2t | 3.74 | AS | |
| Typical Thermal Resistance, Junction to Ambient | RJA | 101 | C/W | (Note 6) (Per Element) |
| Typical Thermal Resistance, Junction to Lead | RJL | 42 | C/W | (Per Element) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Reverse Breakdown Voltage | V(BR)R | 1000 | V | IR = 5A (Note 7) |
| Forward Voltage (Typical) | VF | 0.93 | V | IF = 0.8A, TA = +25C |
| Forward Voltage (Max) | VF | 1.1 | V | IF = 0.8A, TA = +25C |
| Leakage Current (Typical) | IR | 0.2 | A | VR = 1,000V, TA = +25C (Note 7) |
| Leakage Current (Max) | IR | 5 | A | VR = 1,000V, TA = +25C (Note 7) |
| Leakage Current (Typical) | IR | 21 | A | VR = 1,000V, TA = +125C (Note 7) |
| Leakage Current (Max) | IR | 500 | A | VR = 1,000V, TA = +125C (Note 7) |
| Total Capacitance (Typical) | CT | 8 | pF | VR = 4V, f = 1.0MHz (Per Element) |
1912111437_DIODES-MB10S-13_C460887.pdf
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