Diodes DMN63D8L 7 N Channel Enhancement Mode MOSFET with Low Input Output Leakage and Fast Switching
Key Attributes
Model Number:
DMN63D8L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
350mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.5Ω@4V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
2.2pF
Number:
1 N-channel
Output Capacitance(Coss):
3pF
Input Capacitance(Ciss):
23.2pF
Pd - Power Dissipation:
520mW
Gate Charge(Qg):
900pC@10V
Mfr. Part #:
DMN63D8L-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMN63D8L is a new product N-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications such as motor control and backlighting. Key features include low input capacitance, fast switching speed, low input/output leakage, and an ESD-protected gate. The device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Material: Molded Plastic, Green Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Alloy 42 Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Qualification: AEC-Q101 Standards for High Reliability
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| V(BR)DSS | V(BR)DSS | 30 | V | TA = +25C |
| RDS(ON) max | RDS(ON) max | 2.8 | VGS = 10V, ID = 250mA | |
| RDS(ON) max | RDS(ON) max | 3.8 | VGS = 5V, ID = 250mA | |
| ID max | ID max | 350 | mA | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 30 | V | @TA = +25C |
| Gate-Source Voltage | VGSS | 20 | V | @TA = +25C |
| Continuous Drain Current (Note 6) | ID | 350 | mA | VGS = 10V, Steady State, TA = +25C |
| Continuous Drain Current (Note 6) | ID | 280 | mA | VGS = 10V, Steady State, TA = +70C |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) (Note 6) | IDM | 1.2 | A | @TA = +25C |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 350 | mW | Steady State, @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 359 | C/W | Steady State, @TA = +25C |
| Total Power Dissipation (Note 6) | PD | 520 | mW | Steady State, @TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 243 | C/W | Steady State, @TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | N/A |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | A | VDS = 30V, VGS = 0V, @TA = +25C |
| Gate-Source Leakage | IGSS | 10.0 | A | VGS = 20V, VDS = 0V, @TA = +25C |
| Gate Threshold Voltage | VGS(TH) | 0.8 to 1.5 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 2.8 | VGS = 10.0V, ID = 250mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 3.8 | VGS = 5.0V, ID = 250mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.2 | VGS = 4.5V, ID = 250mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 4.5 | VGS = 4.0V, ID = 250mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 13 | VGS = 2.5V, ID = 10mA | |
| Forward Transconductance | gFS | 80 | mS | VDS = 10V, ID = 0.115A |
| Diode Forward Voltage | VSD | 0.8 to 1.2 | V | VGS = 0V, IS = 115mA |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 23.2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 3.0 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.2 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | RG | 79.9 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge | Qg | 0.9 | nC | VGS = 10V, VDS = 30V, ID = 150mA |
| Total Gate Charge | Qg | 0.4 | nC | VGS = 4.5V, VDS = 30V, ID = 150mA |
| Gate-Source Charge | Qgs | 0.1 | nC | VGS = 4.5V, VDS = 30V, ID = 150mA |
| Gate-Drain Charge | Qgd | 0.2 | nC | VGS = 4.5V, VDS = 30V, ID = 150mA |
| Turn-On Delay Time | tD(ON) | 2.3 | ns | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 |
| Turn-On Rise Time | tR | 3.9 | ns | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 |
| Turn-Off Delay Time | tD(OFF) | 11.4 | ns | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 |
| Turn-Off Fall Time | tF | 16.7 | ns | VDD = 30V, ID = 0.115A, VGEN = 10V, RGEN = 25 |
| Mechanical Data | ||||
| Case | SOT23 | N/A | N/A | N/A |
| Weight (Approximate) | N/A | 0.008 | grams | N/A |
| Ordering Information | ||||
| Part Number | Case | Packaging | N/A | N/A |
| DMN63D8L-7 | SOT23 | 3000/Tape & Reel | N/A | N/A |
| DMN63D8L-13 | SOT23 | 10000/Tape & Reel | N/A | N/A |
| Package Outline Dimensions (SOT23) | ||||
| Dimension | Min | Max | Typ | Unit |
| A | 0.37 | 0.51 | 0.40 | mm |
| B | 1.20 | 1.40 | 1.30 | mm |
| C | 2.30 | 2.50 | 2.40 | mm |
| D | 0.89 | 1.03 | 0.915 | mm |
| F | 0.45 | 0.60 | 0.535 | mm |
| G | 1.78 | 2.05 | 1.83 | mm |
| H | 2.80 | 3.00 | 2.90 | mm |
| J | 0.013 | 0.10 | 0.05 | mm |
| K | 0.890 | 1.00 | 0.975 | mm |
| K1 | 0.903 | 1.10 | 1.025 | mm |
| L | 0.45 | 0.61 | 0.55 | mm |
| L1 | 0.25 | 0.55 | 0.40 | mm |
| M | 0.085 | 0.150 | 0.110 | mm |
| a | 8 | N/A | N/A | |
1912111437_DIODES-DMN63D8L-7_C338876.pdf
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