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quality DIODES DMN65D8L 7 N channel MOSFET with gate protection and moisture sensitivity level one compliance factory
quality DIODES DMN65D8L 7 N channel MOSFET with gate protection and moisture sensitivity level one compliance factory

DIODES DMN65D8L 7 N channel MOSFET with gate protection and moisture sensitivity level one compliance

Key Attributes
Model Number: DMN65D8L-7
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
310mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
4Ω@5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
22pF@25V
Pd - Power Dissipation:
540mW
Gate Charge(Qg):
870pC@10V
Mfr. Part #:
DMN65D8L-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated DMN65D8L is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, including DC-DC converters, power-management functions, battery-operated systems, solid-state relays, and various driver applications for relays, solenoids, lamps, and transistors. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and a small surface-mount package. The device is ESD protected and fully RoHS compliant, being totally lead-free and halogen/antimony-free.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Package: SOT23 (Standard)
  • Material: Molded Plastic
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Lead Finish: Matte Tin, Annealed over Alloy 42 Leadframe
  • Certifications: Fully RoHS Compliant (Notes 1 & 2), Halogen and Antimony Free. Green Device (Note 3)
  • ESD Protection: Gate Protected to 1kV

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250A
Gate-Source Voltage VGSS 20 V
Continuous Drain Current (VGS = 10V, TA = +25C) ID 310 mA Steady State, TA = +25C
Continuous Drain Current (VGS = 5V, TA = +25C) ID 270 mA Steady State, TA = +25C
Static Drain-Source On-Resistance (VGS = 10V) RDS(ON) 3 ID = 0.115A
Static Drain-Source On-Resistance (VGS = 5V) RDS(ON) 4 ID = 0.115A
Total Power Dissipation PD 370 (Note 5) / 540 (Note 6) mW @TA = +25C
Thermal Resistance, Junction to Ambient RJA 348 (Note 6) / 241 (Note 5) C/W @TA = +25C
Thermal Resistance, Junction to Case RJC 91 C/W @TA = +25C (Note 5)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Gate Threshold Voltage VGS(TH) 1.2 - 2.0 V VDS = VGS, ID = 250A
Input Capacitance Ciss 22 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 3.2 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 2.0 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 10V) Qg 0.87 nC VGS = 10V, VDS = 30V, ID = 150mA
Weight 0.008487 grams (Approximate)
Ordering Information Part Number Package Qty. Carrier
DMN65D8L-7 SOT23 (Standard) 3,000 Tape & Reel
DMN65D8L-13 SOT23 (Standard) 10,000 Tape & Reel

2412251007_DIODES-DMN65D8L-7_C155341.pdf

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