High temperature rated 60V Dual N Channel MOSFET Diodes DMNH6022SSD 13 for power management systems
Product Overview
The DMNH6022SSD is a new generation 60V Dual N-Channel MOSFET designed for high-efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. This MOSFET is rated to +175C, making it ideal for high ambient temperature environments. It features 100% Unclamped Inductive Switching for enhanced reliability and robustness, low RDS(ON) to minimize power losses, and low Qg to reduce switching losses. The device is also Totally Lead-Free, Fully RoHS Compliant, and Halogen and Antimony Free, qualifying as a Green device. It is qualified to AEC-Q101 Standards for high reliability.
Applications:
- Engine Management Systems
- Body Control Electronics
- DC-DC Converters
Product Attributes
- Brand: Diodes Incorporated
- Product Family: DMNH6022SSD
- Case Material: Molded Plastic, Green Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Certifications: Qualified to AEC-Q101 Standards
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250A |
| Gate-Source Voltage | VGSS | 20 | V | |
| Continuous Drain Current @ VGS = 10V, TC = +25C | ID | 22.6 | A | TC = +25C |
| Continuous Drain Current @ VGS = 6V, TC = +25C | ID | 21.5 | A | TC = +25C |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 45 | A | |
| Avalanche Current L=0.1mL | IAS | 22 | A | Note 7 |
| Avalanche Energy L=0.1mL | EAS | 24 | mJ | Note 7 |
| Total Power Dissipation (Note 5) TA = +25C | PD | 1.5 | W | TA = +25C |
| Total Power Dissipation (Note 6) TA = +25C | PD | 2.1 | W | TA = +25C |
| Thermal Resistance, Junction to Ambient (Note 5) Steady State | RJA | 104 | C/W | |
| Thermal Resistance, Junction to Ambient (Note 6) Steady State | RJA | 74 | C/W | |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 7.25 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +175 | C | |
| Gate Threshold Voltage | VGS(TH) | 1.0 to 3.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance @ VGS = 10V, ID = 5A | RDS(ON) | 21 to 27 | m | VGS = 10V, ID = 5A |
| Static Drain-Source On-Resistance @ VGS = 6V, ID = 5A | RDS(ON) | 24 to 30 | m | VGS = 6V, ID = 5A |
| Diode Forward Voltage | VSD | 0.8 to 1.2 | V | VGS = 0V, IS = 1.7A |
| Input Capacitance | Ciss | 2127 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 86 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 54 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Total Gate Charge at (VGS = 10V) | Qg | 32 | nC | VDS = 30V, ID = 6A |
| Total Gate Charge at (VGS = 4.5V) | Qg | 14 | nC | VDS = 30V, ID = 6A |
| Body Diode Reverse Recovery Time | tRR | 18.1 | ns | IF = 1.7A, di/dt = 100A/s |
| Body Diode Reverse Recovery Charge | QRR | 12.5 | nC | IF = 1.7A, di/dt = 100A/s |
| Case | SO-8 | |||
| Weight | 0.074 | grams (Approximate) | ||
| Ordering Information | Part Number | DMNH6022SSD-13 | SO-8, 2,500 / Tape & Reel |
Dimensions (SO-8):
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 1.40 | 1.50 | 1.45 |
| A1 | 0.10 | 0.20 | 0.15 |
| b | 0.30 | 0.50 | 0.40 |
| c | 0.15 | 0.25 | 0.20 |
| D | 4.85 | 4.95 | 4.90 |
| E | 5.90 | 6.10 | 6.00 |
| E1 | 3.80 | 3.90 | 3.85 |
| E0 | 3.85 | 3.95 | 3.90 |
| e | -- | -- | 1.27 |
| h | - | -- | 0.35 |
| L | 0.62 | 0.82 | 0.72 |
| Q | 0.60 | 0.70 | 0.65 |
All Dimensions in mm
2412251045_DIODES-DMNH6022SSD-13_C2925737.pdf
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