High temperature rated 60V Dual N Channel MOSFET Diodes DMNH6022SSD 13 for power management systems

Key Attributes
Model Number: DMNH6022SSD-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
22.6A
Operating Temperature -:
-55℃~+175℃
RDS(on):
27mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Reverse Transfer Capacitance (Crss@Vds):
54pF@25V
Number:
-
Pd - Power Dissipation:
2.1W
Input Capacitance(Ciss):
2.127nF@25V
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
DMNH6022SSD-13
Package:
SO-8
Product Description

Product Overview

The DMNH6022SSD is a new generation 60V Dual N-Channel MOSFET designed for high-efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. This MOSFET is rated to +175C, making it ideal for high ambient temperature environments. It features 100% Unclamped Inductive Switching for enhanced reliability and robustness, low RDS(ON) to minimize power losses, and low Qg to reduce switching losses. The device is also Totally Lead-Free, Fully RoHS Compliant, and Halogen and Antimony Free, qualifying as a Green device. It is qualified to AEC-Q101 Standards for high reliability.

Applications:

  • Engine Management Systems
  • Body Control Electronics
  • DC-DC Converters

Product Attributes

  • Brand: Diodes Incorporated
  • Product Family: DMNH6022SSD
  • Case Material: Molded Plastic, Green Molding Compound
  • UL Flammability Classification: 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Certifications: Qualified to AEC-Q101 Standards

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS 60 V VGS = 0V, ID = 250A
Gate-Source Voltage VGSS 20 V
Continuous Drain Current @ VGS = 10V, TC = +25C ID 22.6 A TC = +25C
Continuous Drain Current @ VGS = 6V, TC = +25C ID 21.5 A TC = +25C
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) IDM 45 A
Avalanche Current L=0.1mL IAS 22 A Note 7
Avalanche Energy L=0.1mL EAS 24 mJ Note 7
Total Power Dissipation (Note 5) TA = +25C PD 1.5 W TA = +25C
Total Power Dissipation (Note 6) TA = +25C PD 2.1 W TA = +25C
Thermal Resistance, Junction to Ambient (Note 5) Steady State RJA 104 C/W
Thermal Resistance, Junction to Ambient (Note 6) Steady State RJA 74 C/W
Thermal Resistance, Junction to Case (Note 6) RJC 7.25 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +175 C
Gate Threshold Voltage VGS(TH) 1.0 to 3.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance @ VGS = 10V, ID = 5A RDS(ON) 21 to 27 m VGS = 10V, ID = 5A
Static Drain-Source On-Resistance @ VGS = 6V, ID = 5A RDS(ON) 24 to 30 m VGS = 6V, ID = 5A
Diode Forward Voltage VSD 0.8 to 1.2 V VGS = 0V, IS = 1.7A
Input Capacitance Ciss 2127 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 86 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 54 pF VDS = 25V, VGS = 0V, f = 1.0MHz
Total Gate Charge at (VGS = 10V) Qg 32 nC VDS = 30V, ID = 6A
Total Gate Charge at (VGS = 4.5V) Qg 14 nC VDS = 30V, ID = 6A
Body Diode Reverse Recovery Time tRR 18.1 ns IF = 1.7A, di/dt = 100A/s
Body Diode Reverse Recovery Charge QRR 12.5 nC IF = 1.7A, di/dt = 100A/s
Case SO-8
Weight 0.074 grams (Approximate)
Ordering Information Part Number DMNH6022SSD-13 SO-8, 2,500 / Tape & Reel

Dimensions (SO-8):

Dim Min Max Typ
A 1.40 1.50 1.45
A1 0.10 0.20 0.15
b 0.30 0.50 0.40
c 0.15 0.25 0.20
D 4.85 4.95 4.90
E 5.90 6.10 6.00
E1 3.80 3.90 3.85
E0 3.85 3.95 3.90
e -- -- 1.27
h - -- 0.35
L 0.62 0.82 0.72
Q 0.60 0.70 0.65

All Dimensions in mm


2412251045_DIODES-DMNH6022SSD-13_C2925737.pdf

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