Fast recovery 3 amp bridge rectifier DIODES MRS30M designed for battery chargers adapters and home appliances
Key Attributes
Model Number:
MRS30M
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.3V@3A
Current - Rectified:
3A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MRS30M
Package:
MSBL
Product Description
Product Overview
The MRS30M is a 3.0A surface mount fast recovery bridge rectifier designed for AC to DC full wave rectification. It is suitable for various applications including SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, EMI design friendly filter rectification, a compact and thin profile, and robust construction. This device is rated at 1000V PRV and is RoHS compliant, Halogen and Antimony free (Green Device).
Product Attributes
- Brand: Diodes Incorporated
- Model: MRS30M
- Case Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Lead Free Plating (Matte Tin Finish)
- Polarity: As Marked on Body
- Certifications: RoHS Compliant, Halogen and Antimony Free (Green Device)
- Origin: Not specified in text
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
| Peak Repetitive Reverse Voltage | VRRM | 1000 | V | |
| Working Peak Reverse Voltage | VRWM | 1000 | V | |
| DC Blocking Voltage | VR | 1000 | V | |
| Average Rectified Output Current | IO | 3.0 | A | @ TC = +130C |
| Non-Repetitive Peak Forward Surge Current | IFSM | 100 | A | 8.3ms Single Half Sine-Wave Superimposed on Rated Load |
| It Rating for Fusing | It | 41.5 | As | (1ms < t < 8.3ms) |
| Reverse Breakdown Voltage | V(BR)R | 1,000 | V | IR = 5A |
| Forward Voltage (Per Element) | VF | 1.3 | V | IF = 3A, TA = +25C |
| Forward Voltage (Per Element) | VF | 0.99 | V | IF = 3A, TA = +125C |
| Leakage Current (Per Element) | IR | 5 | A | VR = 1,000V, TA = +25C |
| Leakage Current (Per Element) | IR | 81 | A | VR = 1,000V, TA = +125C |
| Total Capacitance | CT | 45 | pF | VR = 4V, f = 1.0MHz |
| Reverse Recovery Time | tRR | 250 | ns | IF = 0.5A, IRR = 0.25A, IR = 1.0A |
| Thermal Resistance, Junction to Ambient (Per Element) | RJA | 25 | C/W | Device mounted on 120mm*96mm*1.45mm Aluminum plate. |
| Thermal Resistance, Junction to Case (Per Element) | RJC | 2 | C/W | Device mounted on 120mm*96mm*1.45mm Aluminum plate. |
| Thermal Resistance, Junction to Lead (Per Element) | RJL | 10 | C/W | Device mounted on 120mm*96mm*1.45mm Aluminum plate. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C |
2308101555_DIODES-MRS30M_C5245089.pdf
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