robust construction DIODES MSB30M-13 bridge rectifier with lead free plating and matte tin finish terminals
Key Attributes
Model Number:
MSB30M-13
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
200A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@3A
Current - Rectified:
3A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
MSB30M-13
Package:
MSBL
Product Description
MSB30M ADVANCED INFORMATION NEW PRODUCT
The MSB30M is a 3.0A surface mount glass passivated bridge rectifier. It is suitable for AC to DC full wave rectification in applications such as SMPS, LED lighting, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. Key features include glass passivated die construction, a compact and thin profile, reliable robust construction, and suitability for SMT manufacturing. This device is rated at 1000V PRV and is lead-free, RoHS compliant, and a "Green" device (Halogen and Antimony Free).
Product Attributes
- Brand: Diodes Incorporated
- Construction: Glass Passivated Die
- Package Design: Compact, Thin Profile
- Manufacturing Suitability: Ideal for SMT Manufacturing
- Compliance: Lead-Free Finish; RoHS Compliant; Halogen and Antimony Free ("Green" Device)
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Terminals: Lead Free Plating (Matte Tin Finish)
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Maximum Ratings | VRRM, VRWM, VR | 1000 | V | |
| VR(RMS) | 700 | V | ||
| IO (@ TC = +120C) | 3.0 | A | Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. | |
| IFSM (8.3ms) | 100 | A | Non-Repetitive Peak Forward Surge Current, 8.3ms Single Half Sine-Wave Superimposed on Rated Load | |
| IFSM (1.0ms) | 200 | A | Non-Repetitive Peak Forward Surge Current, 1.0ms Single Half Sine-Wave Superimposed on Rated Load | |
| I2t Rating | I2t | 41.5 | A2S | (1ms < t < 8.3ms) |
| Thermal Characteristics | RJA (Typical) | 11 | C/W | Junction to Ambient (Note 5) (Per Element) |
| RJC (Typical) | 8 | C/W | Junction to Case | |
| RJL (Typical) | 15 | C/W | Junction to Lead | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | V(BR)R (Min) | 1,000 | V | Reverse Breakdown Voltage (Note 6), IR = 5A |
| VF (Per Element) | 0.80 - 0.88 | V | IF = 1.5A, TA = +25C | |
| 1.02 - 1.1 | V | IF = 3.0A, TA = +25C | ||
| (Typ) 0.80 | V | IF = 1.5A, TA = +25C | ||
| Leakage Current (Per Element) | IR | (Typ) 0.31 | A | VR = 1,000V, TA = +25C |
| (Max) 5 | A | VR = 1,000V, TA = +25C | ||
| Total Capacitance | CT | 35 (Typ) | pF | VR = 4V, f = 1.0MHz (Note 7) |
1912111437_DIODES-MSB30M-13_C460923.pdf
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