Small signal switching diode DIOTEC BAV21WS with low junction capacitance and superfast recovery
Key Attributes
Model Number:
BAV21WS
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
2.5A
Reverse Leakage Current (Ir):
100nA@200V
Reverse Recovery Time (trr):
50ns
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
200V
Operating Junction Temperature Range:
-
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1.25V@200mA
Current - Rectified:
200mA
Mfr. Part #:
BAV21WS
Package:
SOD-323
Product Description
Product Overview
The BAV19WS to BAV21WS series are SMD small signal switching diodes designed for high-speed switching, signal processing, and rectifying applications. These diodes offer high reverse voltage, superfast recovery times, low junction capacitance, and low leakage current. They are compliant with RoHS (without exemption), REACH, and Conflict Minerals regulations. Available in commercial/industrial grade and with options for AEC-Q101 compliance (-Q/-AQ suffixes), these diodes are suitable for a wide range of commercial and industrial applications.
Product Attributes
- Brand: Diotec Semiconductor AG
- Marking Code: WO, S7 or B21
- HS Code: 85411000
- Grade: Commercial / Industrial
- Suffix -Q: AEC-Q101 compliant
- Suffix -AQ: AEC-Q101 qualification
- Compliance: RoHS (w/o exemp.), REACH, Conflict Minerals
- Packaging: Taped and reeled (3000 / 7)
- Weight: approx. 0.01 g
- Solder & assembly conditions: 260C/10s
- MSL: 1
Technical Specifications
| Specification | BAV19WS | BAV20WS / -Q/-AQ | BAV21WS / -Q/-AQ | Unit | Conditions |
|---|---|---|---|---|---|
| Power dissipation (Ptot) | 200 | mW | Mounted on PCB with 3 mm copper pad per terminal | ||
| Max. average forward current (IFAV) | 200 | mA | |||
| Repetitive peak forward current (IFRM) | 625 | mA | |||
| Non repetitive peak forward surge current (IFSM) (tp 1 s) | 0.5 | A | |||
| Non repetitive peak forward surge current (IFSM) (tp 1 s) | 2.5 | A | |||
| Repetitive peak reverse voltage (VRRM) | 120 | 200 | 250 | V | |
| Reverse voltage (VR) DC | 100 | 150 | 200 | V | |
| Junction temperature (Tjmax) | 150 | C | |||
| Storage temperature (TS) | -55...+150 | C | |||
| Forward voltage (VF) (IF = 100 mA) | < 1 | V | Tj = 25C | ||
| Forward voltage (VF) (IF = 200 mA) | < 1.25 | V | Tj = 25C | ||
| Leakage current (IR) | < 100 | nA | Tj = 25C, VR = VR DC | ||
| Max. junction capacitance (CT) | < 5 | pF | VR = 0 V, f = 1 MHz | ||
| Reverse recovery time (trr) | < 50 | ns | IF = 30 mA, IR = 30 mA to 1 mA | ||
| Typical thermal resistance junction to ambient (RthA) | 625 | K/W | Mounted on PCB with 3 mm copper pad per terminal | ||
| Typical thermal resistance junction-terminal (RthT) | 450 | K/W | |||
2504101957_DIOTEC-BAV21WS_C3313066.pdf
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