Molded Plastic Bridge Rectifier DIODES S-KBP210G-TU-LT Featuring 1000 Volt Reverse Voltage and 2 Ampere Current
Key Attributes
Model Number:
S-KBP210G-TU-LT
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@2A
Current - Rectified:
2A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
S-KBP210G-TU-LT
Package:
KBP
Product Description
Product Overview
The KBP204G~KBP210G series are glass passivated bridge rectifiers designed for applications requiring reverse voltages from 400 to 1000 Volts and a forward current of 2.0 Amperes. These rectifiers are ideal for printed circuit board mounting, offering reliable, low-cost construction through a molded plastic technique. The material used has a UL flammability classification of 94V-0, and the series is UL recognized.
Product Attributes
- Brand: LSC (implied by disclaimer)
- Material: Glass Passivated, Molded Plastic
- UL Flammability Classification: 94V-0
- UL Recognition: File #95060
- Polarity: As marked on body
- Weight: 0.05 ounces, 1.52 grams
- Mounting Position: Any
Technical Specifications
| CHARACTERISTICS | SYMBOL | KBP204G | KBP206G | KBP208G | KBP210G | UNIT |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 400 | 600 | 800 | 1000 | V |
| Maximum RMS Voltage | VRMS | 280 | 420 | 560 | 700 | V |
| Maximum DC Blocking Voltage | VDC | 400 | 600 | 800 | 1000 | V |
| Maximum Average Forward Rectified Current @TC=100C | I(AV) | 2.0 | A | |||
| Peak Forward Surge Current @ Tj = 25 8.3ms single half sine-wave | IFSM | 75 | A | |||
| Peak Forward Surge Current @ Tj = 125 8.3ms single half sine-wave | IFSM | 65 | A | |||
| Peak Forward Surge Current @ Tj = 25 1.0ms single half sine-wave | IFSM | 150 | A | |||
| Peak Forward Surge Current @ Tj = 125 1.0ms single half sine-wave | IFSM | 130 | A | |||
| Maximum Forward Voltage at 2.0A DC | VF | 1.1 | V | |||
| Maximum DC Reverse Current at rated Blocking Voltage @Tj=25C | IR | 5.0 | uA | |||
| Maximum DC Reverse Current at rated Blocking Voltage @Tj=125C | IR | 500 | uA | |||
| I2t Rating for fusing (3ms t 8.3 ms) | I2t | 17.5 | A2S | |||
| Typical Junction Capacitance per element (Note 1) | CJ | 25 | pF | |||
| Typical thermal resistance Junction to Case | RJC | 10 | C/W | |||
| Typical thermal resistance Junction to Lead | RJL | 18 | C/W | |||
| Typical thermal resistance Junction to Ambient | RJA | 40 | C/W | |||
| Operation Temperature Range | TJ | -55 to 150 | C | |||
| Storage Temperature Range | TSTG | -55 to 150 | C | |||
Note:
(1) Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(2) Thermal Resistance Junction to Case, Lead and Ambient.
2304140030_DIODES-S-KBP210G-TU-LT_C266385.pdf
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