DoesShare DN3400 N Channel Enhancement Mode Transistor Designed for Load Switching and Power Control
Key Attributes
Model Number:
DN3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
RDS(on):
35mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
1.05nF
Mfr. Part #:
DN3400
Package:
SOT-23
Product Description
Product Overview
The DN3400 is an N-Channel Enhancement Mode Field Effect Transistor designed with a high-density cell structure for extremely low RDS(ON). It offers exceptional on-resistance and maximum DC current capability, making it suitable for load/power switching and interfacing switching applications.
Product Attributes
- Brand: DOESHARE
- Device Type: N-Channel Enhancement MOSFET
- Device Marking: N06
- Material Type: Green
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) | ||||
| Drain-Source Voltage | VDS | 30 | V | |
| Gate-Source Voltage | VGS | ±12 | V | |
| Continuous Drain Current | ID | 5.8 | A | |
| Drain Current-Pulsed (note 1) | IDM | 30 | A | |
| Power Dissipation | PD | 350 | mW | |
| Thermal Resistance from Junction to Ambient (note 2) | RθJA | 357 | /W | |
| Junction Temperature | TJ | 150 | ||
| Storage Temperature | TSTG | -55~+150 | ||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||
| Off Characteristics | ||||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID =250µA |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =24V,VGS = 0V |
| Gate-source leakage current | IGSS | ±100 | nA | VGS =±12V, VDS = 0V |
| On characteristics | ||||
| Drain-source on-resistance (note 3) | RDS(on) | 35 | mΩ | VGS =10V, ID =5.8A |
| 40 | mΩ | VGS =4.5V, ID =5A | ||
| 52 | mΩ | VGS =2.5V,ID=4A | ||
| Forward tranconductance | gFS | 8 | S | VDS =5V, ID =5A |
| Gate threshold voltage | VGS(th) | 0.7 - 1.4 | V | VDS =VGS, ID =250µA |
| Dynamic Characteristics (note 4,5) | ||||
| Input capacitance | Ciss | 1050 | pF | VDS =15V,VGS =0V,f =1MHz |
| Output capacitance | Coss | 99 | pF | |
| Reverse transfer capacitance | Crss | 77 | pF | |
| Gate resistance | Rg | 3.6 | Ω | VDS =0V,VGS =0V,f =1MHz |
| Switching Characteristics (note 4,5) | ||||
| Turn-on delay time | td(on) | 5 | ns | VGS=10V,VDS=15V, RL=2.7Ω,RGEN=3Ω |
| Turn-on rise time | tr | 7 | ns | |
| Turn-off delay time | td(off) | 40 | ns | |
| Turn-off fall time | tf | 6 | ns | |
| Drain-source diode characteristics and maximum ratings | ||||
| Diode forward voltage (note 3) | VSD | 1 | V | IS=1A,VGS=0V |
| Order Information | ||||
| P/N | Meterial Type | Reel Size | MOQ | |
| DN3400 | Green T/R | 7 inch | 3K | |
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test: Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
2410121629_Doeshare-DN3400_C2931751.pdf
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