P Channel Enhancement Mode MOSFET DIODES DMP2165UW 7 for Power Management Motor Control Applications
Key Attributes
Model Number:
DMP2165UW-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
180mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
32pF
Number:
1 P-Channel
Output Capacitance(Coss):
72pF
Input Capacitance(Ciss):
335pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
3.5nC@4.5V
Mfr. Part #:
DMP2165UW-7
Package:
SOT-323
Product Description
Product Overview
The DMP2165UW is a P-Channel Enhancement Mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for motor control and power management functions, this device offers low input capacitance, fast switching speed, and low input/output leakage. It is also Totally Lead-Free & Fully RoHS Compliant, and a Halogen and Antimony Free Green Device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-Channel Enhancement Mode MOSFET
- Case Material: Molded Plastic, Green Molding Compound
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Certifications: UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Drain-Source Voltage | BVDSS | -20 | V | TA = +25C |
| RDS(ON) max @VGS = -4.5V | RDS(ON) max | 90 | m | TA = +25C |
| ID max @TA = +25C | ID max | -2.5 | A | TA = +25C |
| RDS(ON) max @VGS = -2.5V | RDS(ON) max | 120 | m | TA = +25C |
| ID max @TA = +70C | ID max | -2.0 | A | TA = +70C |
| Mechanical Data | ||||
| Case | SOT323 | |||
| Weight | 0.006 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | Case | Packaging | ||
| DMP2165UW-7 | SOT323 | 3000/Tape & Reel | ||
| DMP2165UW-13 | SOT323 | 10000/Tape & Reel | ||
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -20 | V | @TA = +25C, unless otherwise specified. |
| Gate-Source Voltage | VGSS | 12 | V | @TA = +25C, unless otherwise specified. |
| Continuous Drain Current | ID | -2.5 | A | VGS = -4.5V, Steady State, TA = +25C (Note 6) |
| Continuous Drain Current | ID | -2.0 | A | VGS = -4.5V, Steady State, TA = +70C (Note 6) |
| Maximum Continuous Body Diode Forward Current | IS | -1.0 | A | (Note 6) |
| Pulsed Drain Current | IDM | -15 | A | (10s Pulse, Duty Cycle = 1%) (Note 6) |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 0.5 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 259 | C/W | Steady State (Note 5) |
| Total Power Dissipation | PD | 0.7 | W | (Note 6) |
| Thermal Resistance, Junction to Ambient | RJA | 175 | C/W | Steady State (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A (Note 7) |
| Zero Gate Voltage Drain Current | IDSS | -1.0 | A | VDS = -20V, VGS = 0V, TJ = +25C (Note 7) |
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 12V, VDS = 0V (Note 7) |
| Gate Threshold Voltage | VGS(TH) | -0.4 to -1.0 | V | VDS = VGS, ID = -250A (Note 7) |
| Static Drain-Source On-Resistance | RDS(ON) | 63 to 90 | m | VGS = -4.5V, ID = -1.5A (Note 7) |
| Static Drain-Source On-Resistance | RDS(ON) | 83 to 120 | m | VGS = -2.5V, ID = -1.2A (Note 7) |
| Static Drain-Source On-Resistance | RDS(ON) | 160 to 180 | m | VGS = -1.8V, ID = -1.2A (Note 7) |
| Diode Forward Voltage | VSD | -0.7 to -1.1 | V | VGS = 0V, IS = -1A (Note 7) |
| Input Capacitance | Ciss | 335 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Note 8) |
| Output Capacitance | Coss | 72 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Note 8) |
| Reverse Transfer Capacitance | Crss | 32 | pF | VDS = -15V, VGS = 0V, f = 1.0MHz (Note 8) |
| Gate Resistance | RG | 15.5 | VGS = 0V, VDS = 0V, f = 1.0MHz (Note 8) | |
| Total Gate Charge | Qg | 3.5 | nC | VGS = -4.5V, VDS = -4V, ID = -3.5A (Note 8) |
| Gate-Source Charge | Qgs | 0.4 | nC | (Note 8) |
| Gate-Drain Charge | Qgd | 1.1 | nC | (Note 8) |
| Turn-On Delay Time | tD(ON) | 3.7 | ns | VDS = -4V, VGS = -4.5V, RG = 6, ID = -1A (Note 8) |
| Turn-On Rise Time | tR | 8.7 | ns | (Note 8) |
| Turn-Off Delay Time | tD(OFF) | 17.8 | ns | (Note 8) |
| Turn-Off Fall Time | tF | 8 | ns | (Note 8) |
| Reverse Recovery Time | tRR | 9 | ns | IF = -4A, di/dt = 100A/s (Note 8) |
| Reverse Recovery Charge | QRR | 1.5 | nC | IF = -4A, di/dt = 100A/s (Note 8) |
Notes:
- 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
- 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided.
- 7. Short duration pulse test used to minimize self-heating effect.
- 8. Guaranteed by design. Not subject to product testing.
1912111437_DIODES-DMP2165UW-7_C388477.pdf
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