High Reliability AEC Q101 Qualified DIODES ZXMP6A17E6TA 60V P Channel Enhancement Mode MOSFET Device
Key Attributes
Model Number:
ZXMP6A17E6TA
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@4.5V,1.9A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Number:
-
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
637pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
17.7nC@10V
Mfr. Part #:
ZXMP6A17E6TA
Package:
SOT-26
Product Description
Product Overview
The ZXMP6A17E6 is a 60V P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including DC-DC converters, power management functions, disconnect switches, and motor control. Key features include low on-resistance, fast switching speed, low threshold, low gate drive, and low input capacitance. This device is also Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free, and qualified to AEC-Q101 Standards for High Reliability.
Product Attributes
- Brand: Diodes Incorporated
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Qualification: AEC-Q101 Standards for High Reliability
- Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0
- Terminals Finish: Matte Tin Annealed over Copper Leadframe; Solderable per MIL-STD-202, Method 208
- Moisture Sensitivity: Level 1 per J-STD-020
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDSS | -60 | V | ID = -250A, VGS = 0V |
| Zero Gate Voltage Drain Current | IDSS | A | VDS = -60V, VGS = 0V | |
| Gate-Source Leakage | IGSS | nA | VGS = 20V, VDS = 0V | |
| Gate Threshold Voltage | VGS(th) | -1 | V | ID = -250A, VDS = VGS |
| Gate Threshold Voltage | VGS(th) | V | ID = -250A, VDS = VGS | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.100 | VGS = -10V, ID = -2.3A | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.125 | VGS = -10V, ID = -2.3A | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.130 | VGS = -4.5V, ID = -1.9A | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.190 | VGS = -4.5V, ID = -1.9A | |
| Forward Transconductance | gfs | S | VDS = -15V, ID = -2.3A | |
| Diode Forward Voltage | VSD | V | IS = -2A, VGS = 0V | |
| Reverse Recovery Time | trr | 25.1 | ns | IF = -1.7A, di/dt = 100A/s |
| Reverse Recovery Charge | Qrr | nC | IF = -1.7A, di/dt = 100A/s | |
| Input Capacitance | Ciss | pF | VDS = -30V, VGS = 0V, f = 1MHz | |
| Output Capacitance | Coss | pF | VDS = -30V, VGS = 0V, f = 1MHz | |
| Reverse Transfer Capacitance | Crss | pF | VDS = -30V, VGS = 0V, f = 1MHz | |
| Total Gate Charge | Qg | nC | VGS = -5V, VDS = -30V, ID = -2.3A | |
| Total Gate Charge | Qg | nC | VGS = -10V, VDS = -30V, ID = -2.3A | |
| Gate-Source Charge | Qgs | nC | VGS = -5V, VDS = -30V, ID = -2.3A | |
| Gate-Drain Charge | Qgd | nC | VGS = -5V, VDS = -30V, ID = -2.3A | |
| Turn-On Delay Time | tD(on) | ns | VDD = -30V, VGS = -10V, ID = -1A, RG 6 | |
| Turn-On Rise Time | tr | ns | VDD = -30V, VGS = -10V, ID = -1A, RG 6 | |
| Turn-Off Delay Time | tD(off) | ns | VDD = -30V, VGS = -10V, ID = -1A, RG 6 | |
| Turn-Off Fall Time | tf | ns | VDD = -30V, VGS = -10V, ID = -1A, RG 6 | |
| Power Dissipation | PD | 1.1 | W | TA = +25C (Note 5) |
| Power Dissipation | PD | 1.92 | W | TA = +70C (Note 6) |
| Linear Derating Factor | 8.8 | mW/C | (Note 5) | |
| Linear Derating Factor | 15.4 | mW/C | (Note 6) | |
| Thermal Resistance, Junction to Ambient | RJA | 113 | C/W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 65 | C/W | (Note 6) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Case | SOT-26 | |||
| Weight | 0.018 | grams (Approximate) | ||
| Ordering Information Part Number | ZXMP6A17E6TA | SOT-26, 3,000 per reel |
1808131746_DIODES-ZXMP6A17E6TA_C140565.pdf
Related Products
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Silicon Carbide Schottky Barrier Diode Wolfspeed E4D20120A 1200 Volt 20 Amp Automotive Grade Device
Product Overview This 4th Generation 1200 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode, designated E4D20120A, offers significant performance advantages over silicon-based solutions. Power electronics systems can achieve higher efficiency standards, reach higher frequencies, and attain ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
