DIODES DMN62D0LFB 7B N channel MOSFET with minimized RDS ON and lead free green device certification
Key Attributes
Model Number:
DMN62D0LFB-7B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
320mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@4V,100mA
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
6pF@25V
Number:
-
Input Capacitance(Ciss):
64pF@25V
Pd - Power Dissipation:
500mW
Gate Charge(Qg):
450pC@4.5V
Mfr. Part #:
DMN62D0LFB-7B
Package:
X1-DFN1006-3
Product Description
Product Overview
The Diodes Incorporated DMN62D0LFB is a new generation N-channel enhancement mode MOSFET designed for high-efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance. Ideal for DC-DC converters, power management functions, battery-operated systems, solid-state relays, and various driver applications (relays, solenoids, lamps, displays, etc.). Features include low on-resistance, low input capacitance, fast switching speed, low input/output leakage, and ESD protection. This device is totally lead-free, fully RoHS compliant, and Halogen and Antimony free ("Green" Device).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Totally Lead-Free, Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- ESD Protected: Yes
- Certifications: AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities (for automotive applications, contact sales)
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| Breakdown Voltage (Drain-Source) | BVDSS | 60 | V | TA = +25C |
| On-Resistance (Max) | RDS(ON) | 2 | VGS = 4V | |
| On-Resistance (Max) | RDS(ON) | 2.5 | VGS = 2.5V | |
| Continuous Drain Current (Max) | ID | 320 | mA | TA = +25C |
| Continuous Drain Current (Max) | ID | 50 | mA | TA = +70C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 60 | V | |
| Gate-Source Voltage | VGSS | ±20 | V | |
| Continuous Drain Current (Steady State, VGS = 4.0V, TA = +25C) | ID | 320 | mA | |
| Continuous Drain Current (Steady State, VGS = 4.0V, TA = +70C) | ID | 75 | mA | |
| Pulsed Drain Current | IDM | 1 | A | (Note 6) |
| Power Dissipation | PD | 0.5 | W | (Note 5) |
| Thermal Resistance, Junction to Ambient | RJA | 258 | C/W | @TA = +25C (Note 5) |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | 1.0 | A | TJ = +25C, VDS = 60V, VGS = 0V |
| Gate-Source Leakage | IGSS | ±100 | nA | VGS = ±5V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 0.6 - 1.0 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS(ON) | 1.3 - 2 | VGS = 4V, ID = 100mA | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.5 - 2.5 | VGS = 2.5V, ID = 50mA | |
| Forward Transfer Admittance | |Yfs| | 0.8 | S | VDS = 10V, ID = 200mA |
| Diode Forward Voltage | VSD | 0.9 - 1.3 | V | VGS = 0V, IS = 115mA |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 32 - 64 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 4.4 - 9 | pF | |
| Reverse Transfer Capacitance | Crss | 2.9 - 6 | pF | |
| Gate Resistance | Rg | 126 - 250 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge | Qg | 0.45 - 0.9 | nC | VGS = 4.5V, VDS = 10V, ID = 250mA |
| Gate-Source Charge | Qgs | 0.08 - 0.2 | nC | |
| Gate-Drain Charge | Qgd | 0.08 - 0.2 | nC | |
| Turn-On Delay Time | tD(ON) | 3.4 - 10 | ns | VGS = 10V, VDS = 30V, RL = 150, Rg = 25, ID = 200mA |
| Turn-On Rise Time | tR | 3.4 - 10 | ns | |
| Turn-Off Delay Time | tD(OFF) | 26.4 - 45 | ns | |
| Turn-Off Fall Time | tF | 16.3 - 30 | ns | |
| Mechanical Data | ||||
| Case | X1-DFN1006-3 | |||
| Case Material | Molded Plastic, "Green" Molding Compound; UL Flammability Classification Rating 94V-0 | |||
| Moisture Sensitivity | Level 1 per J-STD-020 | |||
| Terminals Finish | NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 | |||
| Weight | 0.001 | grams (Approximate) | ||
| Ordering Information | ||||
| Part Number | DMN62D0LFB-7 | X1-DFN1006-3 | 3,000 /Tape & Reel | |
| Part Number | DMN62D0LFB-7B | X1-DFN1006-3 | 10,000 /Tape & Reel | |
2411220716_DIODES-DMN62D0LFB-7B_C6934858.pdf
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