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quality N Channel Enhancement Mode Vertical DMOSFET DIODES ZVN4424GTA with 240V Breakdown Voltage and Low RDS factory
quality N Channel Enhancement Mode Vertical DMOSFET DIODES ZVN4424GTA with 240V Breakdown Voltage and Low RDS factory

N Channel Enhancement Mode Vertical DMOSFET DIODES ZVN4424GTA with 240V Breakdown Voltage and Low RDS

Key Attributes
Model Number: ZVN4424GTA
Product Custom Attributes
Drain To Source Voltage:
240V
Current - Continuous Drain(Id):
500mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.5Ω@10V
Gate Threshold Voltage (Vgs(th)):
1.8V@1mA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
-
Output Capacitance(Coss):
25pF
Input Capacitance(Ciss):
200pF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
-
Mfr. Part #:
ZVN4424GTA
Package:
SOT-223
Product Description

Product Overview

The ZVN4424G is an N-Channel Enhancement Mode Vertical DMOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance, making it ideal for applications such as Earth Recall and Dialing Switches, Electronic Hook Switches, Battery Powered Equipment, and Telecoms and High Voltage DC-DC Converters. This device features a 240V breakdown voltage (BVDSS), extremely low RDS(ON) of 4.3, and low threshold voltage with fast switching capabilities. It is manufactured with a lead-free finish, is RoHS compliant, and is a "Green" device (Halogen and Antimony Free). Furthermore, it is qualified to AEC-Q101 Standards for High Reliability and is PPAP Capable.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode Vertical DMOSFET
  • Package: SOT223
  • Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
  • Terminals Finish: Matte Tin Annealed over Copper Leadframe
  • Certifications: AEC-Q101 Qualified, RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Compliance: PPAP Capable

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Voltage BVDSS 240 V ID = 1mA, VGS = 0V
Max RDS(ON) RDS(ON) 4.3 - 6 VGS = 2.5V, ID = 500mA
Max RDS(ON) RDS(ON) 4 - 5.5 VGS = 10V, ID = 500mA
ID @ TA = +25C ID 500 mA TA = +25C
Continuous Drain Current ID 500 mA @TA = +25C, unless otherwise specified
Pulsed Drain Current IDM 1.5 A @TA = +25C, unless otherwise specified
Power Dissipation PTOT 2.5 W @TA = +25C
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Gate-Source Threshold Voltage VGS(TH) 0.8 - 1.8 V ID = 1mA, VDS = VGS
Input Capacitance Ciss 110 - 200 pF VDS = 25V, VGS = 0V, f = 1MHz
Output Capacitance Coss 15 - 25 pF VDS = 25V, VGS = 0V, f = 1MHz
Reverse Transfer Capacitance Crss 3.5 - 15 pF VDS = 25V, VGS = 0V, f = 1MHz
Turn-On Delay Time tD(ON) 2.5 - 5 ns VDD = 50V, VGEN = 10V, ID = 0.25A
Turn-On Rise Time tR 5 - 8 ns VDD = 50V, VGEN = 10V, ID = 0.25A
Turn-Off Delay Time tD(OFF) 40 - 60 ns VDD = 50V, VGEN = 10V, ID = 0.25A
Turn-Off Fall Time tF 16 - 25 ns VDD = 50V, VGEN = 10V, ID = 0.25A
Weight 0.112 grams (Approximate)
Package Dimensions (SOT223 Type DN) See Diagram mm
Ordering Information (Standard) ZVN4424GTA SOT223 (Type DN) 1,000 Packaging
Ordering Information (Automotive) ZVN4424GQTA SOT223 (Type DN) 1,000 Packaging

2005180933_DIODES-ZVN4424GTA_C154893.pdf

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