DMP4047LFDE 7 P Channel MOSFET with Low On Resistance and Antimony Free Green Device Certification
Key Attributes
Model Number:
DMP4047LFDE-7
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
50mΩ@4.5V,3.7A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
81pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.382nF@20V
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
11.2nC@4.5V
Mfr. Part #:
DMP4047LFDE-7
Package:
U-DFN2020-6E
Product Description
Product Overview
The DMP4047LFDE is a new generation P-CHANNEL ENHANCEMENT MODE MOSFET designed for high-efficiency power-management applications. It excels at minimizing on-state resistance (RDS(ON)) while maintaining superior switching performance. Ideal for general-purpose interfacing switches, load switching, battery-management applications, and power-management functions, this device offers a low profile (0.6mm) and a compact PCB footprint of 4mm2. It features a low gate threshold voltage and low on-resistance. The device is totally lead-free, fully RoHS compliant, and halogen and antimony-free, qualifying as a "Green" device. It is also qualified to JEDEC standards for high reliability. An automotive-compliant version (DMP4047LFDEQ) is available under a separate datasheet.
Product Attributes
- Brand: Diodes Incorporated
- Material: Molded Plastic, Green Molding Compound
- Certifications: UL Flammability Classification Rating 94V-0, JEDEC standards (AEC-Q qualified), Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: NiPdAu over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -40 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | A | VDS = -40V, VGS = 0V, TJ = +25C | |
| Gate-Source Leakage | IGSS | nA | VGS = 20V, VDS = 0V | |
| Gate Threshold Voltage | VGS(TH) | -1.0 -2.2 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 26 33 | m | VGS = -10V, ID = -4.4A |
| Static Drain-Source On-Resistance | RDS(ON) | 36 50 | m | VGS = -4.5V, ID = -3.7A |
| Forward Transfer Admittance | |Yfs| | 5.2 | S | VDS = -15V, ID = -4.4A |
| Diode Forward Voltage | VSD | -0.75 -1.2 | V | VGS = 0V, IS = -3.9A |
| Input Capacitance | Ciss | 1382 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 103 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 81 | pF | VDS = -20V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 7.7 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge | Qg | 11.2 | nC | VGS = -4.5V, VDS = -20V, ID = -4.9A |
| Total Gate Charge | Qg | 23.2 | nC | VGS = -10V, VDS = -20V, ID = -4.9A |
| Gate-Source Charge | Qgs | 3.3 | nC | VDS = -20V, ID = -4.9A |
| Gate-Drain Charge | Qgd | 3.9 | nC | VDS = -20V, ID = -4.9A |
| Turn-On Delay Time | tD(ON) | 18.4 | ns | VDS = -20V, ID = -3.9A, VGS = -4.5V, Rg = 1 |
| Turn-On Rise Time | tR | 28.2 | ns | VDS = -20V, ID = -3.9A, VGS = -4.5V, Rg = 1 |
| Turn-Off Delay Time | tD(OFF) | 38.8 | ns | VDS = -20V, ID = -3.9A, VGS = -4.5V, Rg = 1 |
| Turn-Off Fall Time | tF | 28.6 | ns | VDS = -20V, ID = -3.9A, VGS = -4.5V, Rg = 1 |
| Reverse-Recovery Time | tRR | 15.4 | ns | IF = -3.9A, di/dt = 100A/s |
| Reverse-Recovery Charge | QRR | 5.4 | nC | IF = -3.9A, di/dt = 100A/s |
| Continuous Drain Current (Note 5) | ID | -3.3 -2.6 | A | VGS = -10V, Steady State, TA = +25C / +70C |
| Continuous Drain Current (Note 5) | ID | -5.3 -4.2 | A | VGS = -10V, t < 5s, TA = +25C / +70C |
| Continuous Drain Current (Note 6) | ID | -6.0 -4.8 | A | VGS = -10V, Steady State, TA = +25C / +70C |
| Continuous Drain Current (Note 6) | ID | -9.5 -7.6 | A | VGS = -10V, t < 5s, TA = +25C / +70C |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | -40 | A | |
| Maximum Body Diode Continuous Current | IS | -3 | A | |
| Total Power Dissipation (Note 5) | PD | 0.7 0.42 | W | TA = +25C / +70C |
| Total Power Dissipation (Note 6) | PD | 2.1 1.3 | W | TA = +25C / +70C |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 180 | C/W | Steady State |
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 76 | C/W | t < 5s |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 58 | C/W | Steady State |
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 25 | C/W | t < 5s |
| Thermal Resistance, Junction to Case (Note 6) | RJC | 10.2 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Package Dimensions | A | 0.57 0.63 0.60 | mm | Min Max Typ |
| Package Dimensions | A1 | 0.00 0.05 0.03 | mm | Min Max Typ |
| Package Dimensions | A3 | 0.15 | mm | Typ |
| Package Dimensions | b | 0.25 0.35 0.30 | mm | Min Max Typ |
| Package Dimensions | b1 | 0.185 0.285 0.235 | mm | Min Max Typ |
| Package Dimensions | D | 1.95 2.05 2.00 | mm | Min Max Typ |
| Package Dimensions | D2 | 0.85 1.05 0.95 | mm | Min Max Typ |
| Package Dimensions | E | 1.95 2.05 2.00 | mm | Min Max Typ |
| Package Dimensions | E2 | 1.40 1.60 1.50 | mm | Min Max Typ |
| Package Dimensions | e | 0.65 | mm | Typ |
| Package Dimensions | L | 0.25 0.35 0.30 | mm | Min Max Typ |
| Package Dimensions | L1 | 0.82 0.92 0.87 | mm | Min Max Typ |
| Package Dimensions | k | 0.305 | mm | Typ |
| Package Dimensions | k1 | 0.225 | mm | Typ |
| Package Dimensions | Z | 0.20 | mm | Typ |
| Weight | 0.0065 | grams (Approximate) |
2412251055_DIODES-DMP4047LFDE-7_C442635.pdf
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