Low RDS on P channel MOSFET DIODES DMP6023LSS 13 designed for power management and DC DC converters

Key Attributes
Model Number: DMP6023LSS-13
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
6.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
143pF
Number:
1 P-Channel
Output Capacitance(Coss):
179pF
Input Capacitance(Ciss):
2.569nF
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
53.1nC@10V
Mfr. Part #:
DMP6023LSS-13
Package:
SO-8
Product Description

Product Overview

The DMP6023LSS is a 60V P-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(on)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including backlighting, power management functions, and DC-DC converters. It features low on-resistance, fast switching speed, low threshold, low gate drive, and low input capacitance. The device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to AEC-Q101 Standards for High Reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Line: DMP6023LSS
  • Channel Type: P-Channel
  • Mode: Enhancement Mode
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Reliability: Qualified to AEC-Q101 Standards
  • Case Material: Molded Plastic, "Green" Molding Compound
  • UL Flammability Classification: Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage VDSS -60 V VGS = 0V, ID = -250A
Gate-Source Voltage VGS ±20 V
Continuous Drain Current (TA = +25°C) ID -6.6 A VGS = -10V
Continuous Drain Current (TA = +70°C) ID -5.3 A VGS = -10V
Static Drain-Source On-Resistance (max @ VGS = -10V) RDS(ON) 25 ID = -5A
Static Drain-Source On-Resistance (max @ VGS = -4.5V) RDS(ON) 33 ID = -4A
Gate Threshold Voltage (typ) VGS(th) -1 V VDS = VGS, ID = -250A
Total Power Dissipation (Note 5) PD 1.2 W
Total Power Dissipation (Note 6) PD 1.6 W
Thermal Resistance, Junction to Ambient (Note 5) RθJA 100 °C/W
Thermal Resistance, Junction to Ambient (Note 6) RθJA 75 °C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Case SO-8
Weight 0.074 grams (Approximate)
Ordering Information Part Number DMP6023LSS-13 Case: SO-8, Packaging: 2,500/Tape & Reel

1809032032_DIODES-DMP6023LSS-13_C154911.pdf

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