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quality High surge current TRIAC DIODES T4M10T600B with 40 Amp peak current and RoHS compliant green device factory
quality High surge current TRIAC DIODES T4M10T600B with 40 Amp peak current and RoHS compliant green device factory

High surge current TRIAC DIODES T4M10T600B with 40 Amp peak current and RoHS compliant green device

Key Attributes
Model Number: T4M10T600B
Product Custom Attributes
Mfr. Part #:
T4M10T600B
Product Description

Overview

The T4M10T600B(LS) is a TRIAC, a silicon bidirectional thyristor designed for general-purpose AC switching applications. It features a sensitive gate, allowing triggering by microcontrollers and other logic circuits, and offers high immunity to dv/dt. With an on-state current rating of 4 Amperes RMS at +100C and a high surge current capability of 40 Amperes, this device is suitable for various power control applications. It operates in three quadrants (Q1, Q2, and Q3) and comes in a rugged, economical TO-220AB package. This product is lead-free, RoHS compliant, and halogen and antimony free, making it a "Green" device.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: TO-220AB
  • Material: Molded Plastic, "Green" Molding Compound
  • Flammability Classification: UL 94V-0
  • Terminals: Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208
  • Certifications: RoHS Compliant, "Green" Device

Technical Specifications

ParameterSymbolValueUnitNotes
MAXIMUM RATINGS
Peak repetitive off-state voltageVDRM, VRRM600V(TJ = -40 to +125C, sine wave, 50 to 60Hz; gate open)
On-stage RMS currentIT(RMS)4.0A(full sine wave 50 to 60Hz, TC = +100C)
Peak non-repetitive surge currentITSM40A(one full cycle 60Hz, TJ = +25C)
Circuit fusing considerationI2t6.6A2s(t = 8.3ms)
Operating junction temperature rangeTJ-40 to +125C
Storage temperature rangeTSTG-40 to +150C
OFF CHARACTERISTICS
Peak repetitive forward or reverse blocking currentIDRM, IRRM10 (TJ = +25C), 2 (TJ = +125C)A, mA(VAK = rated VDRM and VRRM, gate open)
ON CHARACTERISTICS
Peak forward on-state voltageVTM1.6V(ITM = 6A @ tP 2.0ms, duty cycle 2%)
Gate trigger currentIGT1, IGT2, IGT310mA(VD = 12V, RL = 100)
Gate trigger voltageVGT1, VGT2, VGT31.3V(VD = 12V, RL = 100)
Holding currentIH15mA(VD = 12V, initiation current = 200mA, gate open)
Latching currentIL1, IL2, IL330mA(VD = 12V, IG = 10mA)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltagedv/dt50V/s(VAK = 67% rated VDRM, exponential waveform, gate open, TJ = +125C)

2412251013_DIODES-T4M10T600B_C17584529.pdf

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