High Reliability N Channel MOSFET Diodes DMN6075S 7 Ideal for Power Management and DC DC Conversion
Key Attributes
Model Number:
DMN6075S-7
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
24.6pF
Number:
1 N-channel
Output Capacitance(Coss):
32.6pF
Input Capacitance(Ciss):
606pF
Pd - Power Dissipation:
700mW
Gate Charge(Qg):
12.3nC@10V
Mfr. Part #:
DMN6075S-7
Package:
SOT-23
Product Description
Product Overview
The Diodes Incorporated DMN6075S is a new generation N-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) while maintaining superior switching performance. Key applications include DC-DC converters and power management functions. This device is characterized by its low input capacitance, fast switching speed, and is manufactured as a totally lead-free, fully RoHS compliant, and halogen/antimony-free "Green" device. It is also qualified to AEC-Q101 standards for high reliability.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Reliability: Qualified to AEC-Q101 Standards
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Test Condition |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250A | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250A | |
| Static Drain-Source On-Resistance | RDS(ON) | 69 | 85 | m | VGS = 10V, ID = 3.2A | |
| 75 | 120 | m | VGS = 4.5V, ID = 2.8A | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS = 0V, IS = 2.5A | ||
| Input Capacitance | Ciss | 606 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | ||
| Output Capacitance | Coss | 32.6 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | ||
| Reverse Transfer Capacitance | Crss | 24.6 | pF | VDS = 20V, VGS = 0V, f = 1.0MHz | ||
| Total Gate Charge (VGS = 10V) | Qg | 12.3 | nC | VDS = 30V, ID = 3A | ||
| Total Gate Charge (VGS = 4.5V) | Qg | 5.6 | nC | VDS = 30V, ID = 3A | ||
| Gate-Source Charge | Qgs | 1.7 | nC | VDS = 30V, ID = 3A | ||
| Gate-Drain Charge | Qgd | 1.9 | nC | VDS = 30V, ID = 3A | ||
| Turn-On Delay Time | tD(ON) | 3.5 | ns | VGS = 10V, VDS = 30V, Rg = 20, RL = 50 | ||
| Turn-On Rise Time | tR | 4.1 | ns | VGS = 10V, VDS = 30V, Rg = 20, RL = 50 | ||
| Turn-Off Delay Time | tD(OFF) | 35 | ns | VGS = 10V, VDS = 30V, Rg = 20, RL = 50 | ||
| Turn-Off Fall Time | tF | 11 | ns | VGS = 10V, VDS = 30V, Rg = 20, RL = 50 | ||
| Continuous Drain Current (Note 5) | ID | 2.0 | A | VGS = 10V, Steady State, TA = +25C | ||
| Continuous Drain Current (Note 5) | ID | 1.5 | A | VGS = 10V, Steady State, TA = +70C | ||
| Continuous Drain Current (Note 6) | ID | 2.5 | A | VGS = 10V, Steady State, TA = +25C | ||
| Continuous Drain Current (Note 6) | ID | 2.0 | A | VGS = 10V, Steady State, TA = +70C | ||
| Maximum Body Diode Forward Current (Note 5) | IS | 2.0 | A | |||
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 12 | A | |||
| Total Power Dissipation (Note 5) | PD | 0.8 | W | TA = +25C | ||
| Total Power Dissipation (Note 5) | PD | 0.5 | W | TA = +70C | ||
| Thermal Resistance, Junction to Ambient (Note 5) | RJA | 157 | C/W | Steady State | ||
| Total Power Dissipation (Note 6) | PD | 1.15 | W | TA = +25C | ||
| Total Power Dissipation (Note 6) | PD | 0.7 | W | TA = +70C | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RJA | 110 | C/W | Steady State | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | +150 | C | ||
| Weight | 0.008 | grams | Approximate |
Ordering Information
| Product | Reel Size (inches) | Tape Width (mm) | Quantity per Reel |
|---|---|---|---|
| DMN6075S-7 | 7 | 8 | 3,000 |
| DMN6075S-13 | 13 | 8 | 10,000 |
Package Dimensions (SOT23)
| Dim | Min | Max | Typ |
|---|---|---|---|
| A | 0.37 | 0.51 | 0.40 |
| B | 1.20 | 1.40 | 1.30 |
| C | 2.30 | 2.50 | 2.40 |
| D | 0.89 | 1.03 | 0.915 |
| F | 0.45 | 0.60 | 0.535 |
| G | 1.78 | 2.05 | 1.83 |
| H | 2.80 | 3.00 | 2.90 |
| J | 0.013 | 0.10 | 0.05 |
| K | 0.890 | 1.00 | 0.975 |
| K1 | 0.903 | 1.10 | 1.025 |
| L | 0.45 | 0.61 | 0.55 |
| L1 | 0.25 | 0.55 | 0.40 |
| M | 0.085 | 0.150 | 0.110 |
| a | 0 | 8 | -- |
All Dimensions in mm
2412251006_DIODES-DMN6075S-7_C155242.pdf
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