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quality DIODES DMN3023L 7 N channel enhancement mode MOSFET optimized for load switches and DC DC converters factory
quality DIODES DMN3023L 7 N channel enhancement mode MOSFET optimized for load switches and DC DC converters factory

DIODES DMN3023L 7 N channel enhancement mode MOSFET optimized for load switches and DC DC converters

Key Attributes
Model Number: DMN3023L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
67pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
873pF@15V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
18.4nC
Mfr. Part #:
DMN3023L-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated DMN3023L is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications such as load switches, DC-DC converters, and general power management functions. It features low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is ESD protected, totally lead-free, fully RoHS compliant, and Halogen and Antimony free ('Green' device), qualified to AEC-Q101 standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Material: Molded Plastic, 'Green' Molding Compound
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ('Green' Device)
  • Reliability: Qualified to AEC-Q101 Standards
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin Annealed over Copper Leadframe

Technical Specifications

Characteristic Symbol Value Units Test Condition
Product Summary
Drain-Source Voltage V(BR)DSS 30 V TA = +25C
On-Resistance RDS(ON) 25 m VGS = 10V, ID = 6.2A
On-Resistance RDS(ON) 28 m VGS = 4.5V, ID = 5.8A
Maximum Ratings
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
Continuous Drain Current ID 6.2 A VGS = 10V, Steady State, TA = +25C
Continuous Drain Current ID 4.9 A VGS = 10V, Steady State, TA = +70C
Pulsed Drain Current IDM 44 A (380s Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current IS 1.5 A
Avalanche Current IAS 17.5 A L = 0.1mH
Avalanche Energy EAS 15.2 mJ L = 0.1mH
Thermal Characteristics
Total Power Dissipation PD 0.9 W TA = +25C (Note 5)
Total Power Dissipation PD 0.6 W TA = +70C (Note 5)
Thermal Resistance, Junction to Ambient RJA 144 C/W Steady state (Note 5)
Total Power Dissipation PD 1.3 W TA = +25C (Note 6)
Total Power Dissipation PD 0.8 W TA = +70C (Note 6)
Thermal Resistance, Junction to Ambient RJA 97 C/W Steady state (Note 6)
Thermal Resistance, Junction to Case RJC 24 C/W (Note 6)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A (Note 8)
Zero Gate Voltage Drain Current IDSS 1 A VDS = 24V, VGS = 0V (Note 8)
Gate-Body Leakage IGSS 10 A VGS = 16V, VDS = 0V (Note 8)
Gate Threshold Voltage VGS(TH) 0.8 - 1.8 V VDS = VGS, ID = 250A (Note 8)
Static Drain-Source On-Resistance RDS(ON) 25 - 68 m VGS = 10V, ID = 4.0A (Note 8)
Static Drain-Source On-Resistance RDS(ON) 28 - 68 m VGS = 4.5V, ID = 3.5A (Note 8)
Static Drain-Source On-Resistance RDS(ON) 68 m VGS = 2.5V, ID = 2.5A (Note 8)
Source-Drain Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 1A (Note 8)
Input Capacitance Ciss 873 pF VDS = 15V, VGS = 0V, f = 1.0MHz (Note 9)
Output Capacitance Coss 121 pF VDS = 15V, VGS = 0V, f = 1.0MHz (Note 9)
Reverse Transfer Capacitance Crss 67 pF VDS = 15V, VGS = 0V, f = 1.0MHz (Note 9)
Total Gate Charge Qg 18.4 nC VDS = 15V, ID = 4A, VGS = 10V (Note 9)
Total Gate Charge Qg 8.3 nC VDS = 15V, ID = 4A, VGS = 4.5V (Note 9)
Gate-Source Charge Qgs 2.2 nC (Note 9)
Gate-Drain Charge Qgd 2.5 nC (Note 9)
Turn-On Delay Time tD(ON) 17 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6 (Note 9)
Turn-On Rise Time tR 18 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6 (Note 9)
Turn-Off Delay Time tD(OFF) 231 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6 (Note 9)
Turn-Off Fall Time tF 70 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6 (Note 9)
Mechanical Data
Case SOT23
Weight 0.009 grams (Approximate)
Ordering Information
Part Number Case Packaging
DMN3023L-7 SOT23 3,000/Tape & Reel
DMN3023L-13 SOT23 10,000/Tape & Reel

Notes:

  • 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
  • 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
  • 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C.
  • 8. Short duration pulse test used to minimize self-heating effect.
  • 9. Guaranteed by design. Not subject to product testing.

1912111437_DIODES-DMN3023L-7_C443825.pdf

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