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quality N Channel Enhancement Mode MOSFET Diodes DMN3067LW 7 with Low On Resistance and Fast Switching Speed factory
quality N Channel Enhancement Mode MOSFET Diodes DMN3067LW 7 with Low On Resistance and Fast Switching Speed factory

N Channel Enhancement Mode MOSFET Diodes DMN3067LW 7 with Low On Resistance and Fast Switching Speed

Key Attributes
Model Number: DMN3067LW-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
2.6A
Operating Temperature -:
-55℃~+150℃
RDS(on):
98mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
41pF
Number:
-
Output Capacitance(Coss):
54pF
Input Capacitance(Ciss):
447pF
Pd - Power Dissipation:
1.1W
Gate Charge(Qg):
4.6nC@4.5V
Mfr. Part #:
DMN3067LW-7
Package:
SOT-323
Product Description

Product Overview

The Diodes Incorporated DMN3067LW is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it an ideal component for high efficiency power management applications. Key features include low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speed, all within a small surface mount package. The device is ESD protected and fully RoHS compliant, classified as a "Green" device.

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Certifications: AEC-Q101 Standards for High Reliability
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Package Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Terminal Finish: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating)
  • Moisture Sensitivity: Level 1 per J-STD-020

Technical Specifications

Characteristic Symbol Value Units Test Condition
Product Summary: Drain-Source Voltage V(BR)DSS 30 V TA = +25C
Product Summary: RDS(ON) @ VGS = 4.5V RDS(ON) 67 m TA = +25C
Product Summary: ID @ TA = +25C ID 2.6 A TA = +25C
Product Summary: RDS(ON) @ VGS = 4.0V RDS(ON) 70 m TA = +25C
Product Summary: ID @ VGS = 4.0V ID 2.5 A TA = +25C
Product Summary: RDS(ON) @ VGS = 2.5V RDS(ON) 98 m TA = +25C
Product Summary: ID @ VGS = 2.5V ID 2.2 A TA = +25C
Drain-Source Voltage VDSS 30 V @TA = +25C
Gate-Source Voltage VGSS 12 V @TA = +25C
Continuous Drain Current (Steady State, TA = +25C) ID 2.6 A VGS = 4.5V
Continuous Drain Current (Steady State, TA = +70C) ID 2.1 A VGS = 4.5V
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 10 A @TA = +25C
Total Power Dissipation (Device mounted on FR-4 PC board, minimum recommended pad layout, single sided) PD 0.5 W @TA = +25C
Total Power Dissipation (Device mounted on FR-4 substrate PC board, 2oz copper, 1inch square copper pad layout) PD 1.1 W @TA = +25C
Thermal Resistance, Junction to Ambient (Device mounted on FR-4 PC board, minimum recommended pad layout, single sided) RJA 241 C/W @TA = +25C
Thermal Resistance, Junction to Ambient (Device mounted on FR-4 substrate PC board, 2oz copper, 1inch square copper pad layout) RJA 130 C/W @TA = +25C
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 30V, VGS = 0V
Gate-Body Leakage IGSS 10 A VGS = 12V, VDS = 0V
Gate Threshold Voltage VGS(th) 0.5 - 1.5 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS (ON) 48 - 67 m VGS = 4.5V, ID = 2.5A
Static Drain-Source On-Resistance RDS (ON) 50 - 70 m VGS = 4.0V, ID = 2.5A
Static Drain-Source On-Resistance RDS (ON) 70 - 98 m VGS = 2.5V, ID = 2.5A
Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 0.6A
Input Capacitance Ciss 447 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 54 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 41 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Gate Resistance RG 23 VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge Qg 4.6 nC VGS = 4.5V, VDS = 15V, ID = 2.5A
Gate-Source Charge Qgs 1.0 nC VGS = 4.5V, VDS = 15V, ID = 2.5A
Gate-Drain Charge Qgd 1.0 nC VGS = 4.5V, VDS = 15V, ID = 2.5A
Turn-On Delay Time tD(on) 3.8 nS VDD = 15V, ID = 1.25A, VGEN = 4.5V, RGEN = 10
Turn-On Rise Time tr 5.2 nS VDD = 15V, ID = 1.25A, VGEN = 4.5V, RGEN = 10
Turn-Off Delay Time tD(off) 15 nS VDD = 15V, ID = 1.25A, VGEN = 4.5V, RGEN = 10
Turn-Off Fall Time tf 6.1 nS VDD = 15V, ID = 1.25A, VGEN = 4.5V, RGEN = 10
Case SOT323
Weight 0.006 grams (approximate)
Package Dimensions (mm) - A 0.25 - 0.40 (Typ 0.30) mm
Package Dimensions (mm) - B 1.15 - 1.35 (Typ 1.30) mm
Package Dimensions (mm) - C 2.00 - 2.20 (Typ 2.10) mm
Package Dimensions (mm) - D - (Typ 0.65) mm
Package Dimensions (mm) - G 1.20 - 1.40 (Typ 1.30) mm
Package Dimensions (mm) - H 1.80 - 2.20 (Typ 2.15) mm
Package Dimensions (mm) - J 0.0 - 0.10 (Typ 0.05) mm
Package Dimensions (mm) - K 0.90 - 1.00 (Typ 0.95) mm
Package Dimensions (mm) - L 0.25 - 0.40 (Typ 0.30) mm
Package Dimensions (mm) - M 0.10 - 0.18 (Typ 0.11) mm
Package Dimensions (mm) - 0 - 8
Ordering Information: Part Number DMN3067LW-7 SOT323 3000/Tape & Reel
Ordering Information: Part Number DMN3067LW-13 SOT323 10000/Tape & Reel

Applications:

  • Switching
  • Power Management Functions

Features and Benefits:

  • Low On-Resistance
  • Low Gate Threshold Voltage
  • Low Input Capacitance
  • Fast Switching Speed
  • Small Surface Mount Package
  • ESD Protected Gate

1806080224_DIODES-DMN3067LW-7_C212325.pdf

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