DIODES 2N7002DW 7 F ultra small surface mount MOSFET with low input capacitance and high reliability
Key Attributes
Model Number:
2N7002DW-7-F
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
230mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.5Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
2 N-Channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
22pF
Pd - Power Dissipation:
400mW
Mfr. Part #:
2N7002DW-7-F
Package:
SOT-363
Product Description
Product Overview
The 2N7002DW is a dual N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications such as motor control and power management functions. It offers low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is ultra-small, surface-mountable, and is totally lead-free and fully RoHS compliant, as well as being a halogen and antimony-free Green device.
Product Attributes
- Brand: Diodes Incorporated
- Package: SOT363 (Standard)
- Material: Molded Plastic, Green Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Annealed over Alloy 42 Lead-Frame (Lead Free Plating)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Automotive Grade: Available under separate datasheet (2N7002DWQ) for AEC-Q100/101/200 qualified applications.
- Reliability: Qualified to JEDEC standards for High Reliability.
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| BVDSS | BVDSS | 60 | V | TA = +25C |
| RDS(ON) Max | RDS(ON) | 7.5 | VGS = 5V | |
| ID Max | ID | 0.23 | A | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | 60 | V | |
| Drain-Gate Voltage (RGS 1.0M) | VDGR | 60 | V | |
| Gate-Source Voltage Continuous | VGSS | 20 | V | |
| Gate-Source Voltage Pulsed | VGSS | 40 | V | (Note 8) |
| Continuous Drain Current (VGS = 5V, Steady State, TA = +25C) | ID | 0.23 | A | |
| Continuous Drain Current (VGS = 5V, Steady State, TA = +70C) | ID | 0.18 | A | |
| Continuous Drain Current (VGS = 5V, Steady State, TA = +100C) | ID | 0.14 | A | |
| Maximum Continuous Body Diode Forward Current | IS | 0.23 | A | (Note 6) |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | 0.8 | A | |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5, TA = +25C) | PD | 0.31 | W | |
| Total Power Dissipation (Note 5, TA = +70C) | PD | 0.2 | W | |
| Total Power Dissipation (Note 5, TA = +100C) | PD | 0.12 | W | |
| Thermal Resistance, Junction to Ambient (Note 5, Steady State) | RJA | 410 | C/W | |
| Total Power Dissipation (Note 6, TA = +25C) | PD | 0.4 | W | |
| Total Power Dissipation (Note 6, TA = +70C) | PD | 0.25 | W | |
| Total Power Dissipation (Note 6, TA = +100C) | PD | 0.15 | W | |
| Thermal Resistance, Junction to Ambient (Note 6, Steady State) | RJA | 318 | C/W | |
| Thermal Resistance, Junction to Case (Note 6, Steady State) | RJC | 135 | C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | 60 (Min), 70 (Typ) | V | VGS = 0V, ID = 10A |
| Zero Gate Voltage Drain Current (@ TC = +25C) | IDSS | 1.0 | A | VDS = 60V, VGS = 0V |
| Zero Gate Voltage Drain Current (@ TC = +125C) | IDSS | 500 | A | VDS = 60V, VGS = 0V |
| Gate-Body Leakage | IGSS | 10 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 1.0 (Min), 2.0 (Max) | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance (@ TJ = +25C) | RDS(ON) | 3.2 (Typ), 7.5 (Max) | VGS = 5.0V, ID = 0.05A | |
| Static Drain-Source On-Resistance (@ TJ = +125C) | RDS(ON) | 4.4 (Typ), 13.5 (Max) | VGS = 5.0V, ID = 0.05A | |
| Static Drain-Source On-Resistance (@ TJ = +25C) | RDS(ON) | 7.5 (Max) | VGS = 10V, ID = 0.5A | |
| On-State Drain Current | ID(ON) | 0.5 (Typ), 1.0 (Typ) | A | VGS = 10V, VDS = 7.5V |
| Forward Transconductance | gFS | 80 (Typ) | mS | VDS =10V, ID = 0.2A |
| Diode Forward Voltage | VSD | 0.78 (Typ), 1.5 (Max) | V | VGS = 0V, IS = 115mA |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 22 (Typ), 50 (Max) | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 11 (Typ), 25 (Max) | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.0 (Typ), 5.0 (Max) | pF | VDS = 25V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | 7.0 (Typ), 20 (Max) | ns | VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 |
| Turn-Off Delay Time | tD(OFF) | 11.0 (Typ), 20 (Max) | ns | VDD = 30V, ID = 0.2A, RL = 150, VGEN = 10V, RGEN = 25 |
| Mechanical Data | ||||
| Weight | 0.006 | grams (Approximate) | ||
| Package Outline Dimensions (SOT363) | ||||
| Dimension | Min | Max | Typ | Unit |
| A1 | 0.00 | 0.10 | 0.05 | mm |
| A2 | 0.80 | 1.00 | 0.90 | mm |
| b | 0.10 | 0.35 | 0.225 | mm |
| c | 0.08 | 0.22 | 0.15 | mm |
| D | 1.80 | 2.20 | 2.00 | mm |
| E | 2.00 | 2.45 | 2.225 | mm |
| E1 | 1.15 | 1.35 | 1.25 | mm |
| e | -- | -- | 0.65 | mm |
| F | 0.25 | 0.45 | 0.35 | mm |
| L | 0.25 | 0.46 | 0.355 | mm |
| a | 0 | 8 | -- | |
| Suggested Pad Layout (SOT363) | ||||
| Dimension | Value | Unit | ||
| C | 0.650 | mm | ||
| G | 1.300 | mm | ||
| X | 0.420 | mm | ||
| Y | 0.600 | mm | ||
| Y1 | 2.500 | mm | ||
2412251151_DIODES-2N7002DW-7-F_C83571.pdf
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