DIODES DMP2045UQ 13 automotive qualified P channel MOSFET with ESD protected gate and fast switching
Key Attributes
Model Number:
DMP2045UQ-13
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
32mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
66pF
Number:
1 P-Channel
Output Capacitance(Coss):
81pF
Pd - Power Dissipation:
800mW
Input Capacitance(Ciss):
634pF
Gate Charge(Qg):
6.8nC@4.5V
Mfr. Part #:
DMP2045UQ-13
Package:
SOT-23-3
Product Description
Product Overview
The DMP2045UQ is a P-channel enhancement mode MOSFET designed for high efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance. This device is ideal for DC-DC converters and power management functions. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities, making it suitable for automotive applications. The MOSFET features low input capacitance, fast switching speed, low input/output leakage, and an ESD protected gate.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: P-CHANNEL ENHANCEMENT MODE MOSFET
- Compliance: Automotive, AEC-Q101 Qualified, PPAP Capable
- Certifications: IATF 16949 certified facilities
- Material: Molded Plastic, Green Molding Compound (UL Flammability Classification Rating 94V-0)
- Environmental: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals Finish: Matte Tin Annealed over Copper Leadframe
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| BVDSS | BVDSS | -20 | V | TA = +25C |
| RDS(ON) max @ VGS = -4.5V | RDS(ON) max | 45 | m | TA = +25C |
| ID @ TA = +25C | ID | -4.3 | A | TA = +25C |
| RDS(ON) max @ VGS = -2.5V | RDS(ON) max | 58 | m | TA = +25C |
| ID @ TA = +25C | ID | -3.8 | A | TA = +25C |
| RDS(ON) max @ VGS = -1.8V | RDS(ON) max | 90 | m | TA = +25C |
| ID @ TA = +25C | ID | -3.1 | A | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -20 | V | @TA = +25C, unless otherwise specified. |
| Gate-Source Voltage | VGSS | 8 | V | @TA = +25C, unless otherwise specified. |
| Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +25C | ID | -4.3 | A | @TA = +25C, unless otherwise specified. |
| Continuous Drain Current (Note 6) VGS = -4.5V Steady State TA = +70C | ID | -3.5 | A | @TA = +25C, unless otherwise specified. |
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | -1.2 | A | @TA = +25C, unless otherwise specified. |
| Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) | IDM | -25 | A | @TA = +25C, unless otherwise specified. |
| Thermal Characteristics | ||||
| Total Power Dissipation (Note 5) | PD | 0.8 | W | @TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 5) Steady State | RJA | 154 | C/W | @TA = +25C, unless otherwise specified. |
| Total Power Dissipation (Note 6) | PD | 1.2 | W | @TA = +25C, unless otherwise specified. |
| Thermal Resistance, Junction to Ambient (Note 6) Steady State | RJA | 98 | C/W | @TA = +25C, unless otherwise specified. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @TA = +25C, unless otherwise specified. |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -20 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current TJ = +25C | IDSS | -1 | A | VDS = -20V, VGS = 0V |
| Gate-Source Leakage | IGSS | 10 | A | VGS = 8.0V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -0.3 to -1.0 | V | VDS = VGS, ID = -250A |
| Static Drain-Source On-Resistance | RDS(ON) | 32 to 45 | m | VGS = -4.5V, ID = -4.0A |
| Static Drain-Source On-Resistance | RDS(ON) | 42 to 58 | m | VGS = -2.5V, ID = -3.5A |
| Static Drain-Source On-Resistance | RDS(ON) | 54 to 90 | m | VGS = -1.8V, ID = -1.0A |
| Diode Forward Voltage | VSD | -0.7 to -1.2 | V | VGS = 0V, IS = -1.0A |
| Input Capacitance | Ciss | 634 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 81 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 66 | pF | VDS = -10V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 20 | VDS = 0V, VGS = 0V, f = 1.0MHz | |
| Total Gate Charge | Qg | 6.8 | nC | VGS = -4.5V, VDS = -10V, ID = -4A |
| Gate-Source Charge | Qgs | 0.7 | nC | VGS = -4.5V, VDS = -10V, ID = -4A |
| Gate-Drain Charge | Qgd | 1.6 | nC | VGS = -4.5V, VDS = -10V, ID = -4A |
| Turn-On Delay Time | tD(ON) | 4.2 | ns | VDD = -10V, VGS = -4.5V, RL = 3.3, RG = 1 |
| Turn-On Rise Time | tR | 3.4 | ns | VDD = -10V, VGS = -4.5V, RL = 3.3, RG = 1 |
| Turn-Off Delay Time | tD(OFF) | 23 | ns | VDD = -10V, VGS = -4.5V, RL = 3.3, RG = 1 |
| Turn-Off Fall Time | tF | 9.6 | ns | VDD = -10V, VGS = -4.5V, RL = 3.3, RG = 1 |
| Reverse Recovery Time | tRR | 1.8 | ns | IF = -1.0A, di/dt = 100A/s |
| Reverse Recovery Charge | QRR | 9.4 | nC | IF = -1.0A, di/dt = 100A/s |
| Mechanical Data | ||||
| Case | SOT23 | |||
| Weight (Approximate) | 0.009 | grams | ||
| Ordering Information | ||||
| Part Number | Compliance | Case | Packaging | |
| DMP2045UQ-7 | Automotive | SOT23 | 3,000/Tape & Reel | |
| DMP2045UQ-13 | Automotive | SOT23 | 10,000/Tape & Reel | |
2412251120_DIODES-DMP2045UQ-13_C5359507.pdf
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