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quality Low input output leakage N channel MOSFET DIODES MMBF170-7-F designed for power management applications factory
quality Low input output leakage N channel MOSFET DIODES MMBF170-7-F designed for power management applications factory

Low input output leakage N channel MOSFET DIODES MMBF170-7-F designed for power management applications

Key Attributes
Model Number: MMBF170-7-F
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
200mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
2pF
Number:
1 N-channel
Output Capacitance(Coss):
11pF
Input Capacitance(Ciss):
22pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
-
Mfr. Part #:
MMBF170-7-F
Package:
SOT-23
Product Description

Product Overview

The MMBF170 is an N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, including motor controls and general power-management functions. It offers low on-resistance, low gate threshold voltage, low input capacitance, and fast switching speeds. The device also features low input/output leakage and is manufactured to be totally lead-free and fully RoHS compliant, as well as halogen and antimony-free, qualifying it as a "Green" device. It is qualified to JEDEC standards for high reliability.

Product Attributes

  • Brand: Diodes Incorporated
  • Package: SOT23
  • Package Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead-Free Plating)
  • Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), Qualified to JEDEC standards (as references in AEC-Q) for High Reliability.
  • Automotive Compliant Part: Available under separate datasheet (MMBF170Q)

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 100A
Gate Threshold Voltage VGS(th) 0.8 - 3.0 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 5.0 (Typ: 2.2) VGS = 10V, ID = 200mA
Static Drain-Source On-Resistance RDS(ON) 5.3 (Typ: 3.2) VGS = 4.5V, ID = 50mA
Continuous Drain Current ID 200 mA TA = +25C (Note 5)
Pulsed Drain Current IDM 800 mA 10s Pulse, Duty Cycle = 1%
Total Power Dissipation PD 300 mW (Note 5)
Thermal Resistance, Junction to Ambient RJA 417 C/W (Note 5)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Input Capacitance Ciss 22 - 40 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 11 - 30 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 2 - 5 pF VDS = 10V, VGS = 0V, f = 1.0MHz
Turn-On Delay Time tD(on) 10 (Typ) ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50
Turn-Off Delay Time tD(off) 10 (Typ) ns VDD = 25V, ID = 0.5A, VGS = 10V, RGEN = 50
Package Dimensions (SOT23) A 0.90 - 1.15 mm
Package Dimensions (SOT23) D 2.80 - 3.00 mm
Package Dimensions (SOT23) E 2.25 - 2.55 mm
Weight (Approximate) 0.008 grams

Ordering Information

Part Number Package Packing Qty. Carrier
MMBF170-7-F SOT23 (Standard) Tape & Reel 3,000
MMBF170-13-F SOT23 (Standard) Tape & Reel 10,000

2412251004_DIODES-MMBF170-7-F_C151058.pdf

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