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quality Diodes DMN3053L 7 N Channel MOSFET with Low Input Output Leakage and Qualified to AEC Q101 Standards factory
quality Diodes DMN3053L 7 N Channel MOSFET with Low Input Output Leakage and Qualified to AEC Q101 Standards factory

Diodes DMN3053L 7 N Channel MOSFET with Low Input Output Leakage and Qualified to AEC Q101 Standards

Key Attributes
Model Number: DMN3053L-7
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
55mΩ@2.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
-
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
42pF
Number:
1 N-channel
Output Capacitance(Coss):
54pF
Input Capacitance(Ciss):
676pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
17.2nC@10V
Mfr. Part #:
DMN3053L-7
Package:
SOT-23
Product Description

Product Overview

The Diodes Incorporated DMN3053L is a new generation N-channel enhancement mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power management applications, including load switches, DC-DC converters, and other power management functions. It offers low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. The device is ESD protected and environmentally compliant, being totally lead-free, fully RoHS compliant, and halogen and antimony-free ("Green" Device).

Product Attributes

  • Brand: Diodes Incorporated
  • Product Type: N-Channel Enhancement Mode MOSFET
  • Material: Molded Plastic, "Green" Molding Compound
  • Certifications: Qualified to AEC-Q101 Standards, Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminal Finish: Matte Tin annealed over Copper leadframe

Technical Specifications

Characteristic Symbol Value Units Test Condition
Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 12 V
Continuous Drain Current ID 4.0 A VGS = 10V, TA = +25C (Steady State)
3.5 A VGS = 10V, TA = +70C (Steady State)
Pulsed Drain Current (10s pulse, duty cycle = 1%) IDM 35 A
Maximum Body Diode Forward Current IS 1.5 A
Total Power Dissipation PD 0.76 W TA = +25C (Note 5)
0.48 W TA = +70C (Note 5)
Thermal Resistance, Junction to Ambient RJA 165 C/W Steady state (Note 5)
114 C/W t<10s (Note 5)
Total Power Dissipation PD 1.2 W TA = +25C (Note 6)
0.8 W TA = +70C (Note 6)
Thermal Resistance, Junction to Ambient RJA 100 C/W Steady state (Note 6)
69 C/W t<10s (Note 6)
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A
Zero Gate Voltage Drain Current IDSS 1 A VDS = 30V, VGS = 0V
Gate-Body Leakage IGSS 10 A VGS = 10V, VDS = 0V
Gate Threshold Voltage VGS(th) 0.6 - 1.4 V VDS = VGS, ID = 250A
Static Drain-Source On-Resistance RDS(ON) 36-42 m VGS = 10V, ID = 4.0A
44-50 m VGS = 4.5V, ID = 3.5A
50-53 m VGS = 3.0V, ID = 3.0A
53-55 m VGS = 2.5V, ID = 2.8A
Source-Drain Diode Forward Voltage VSD 0.7 - 1.2 V VGS = 0V, IS = 1.25A
Input Capacitance Ciss 676 pF VDS = 15V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 54 pF VDS = 15V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 42 pF VDS = 15V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 15.5 VDS = VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V) Qg 7.3 nC VDS = 15V, ID = 4A
Total Gate Charge (VGS = 10V) Qg 17.2 nC VDS = 15V, ID = 4A
Gate-Source Charge Qgs 1.2 nC
Gate-Drain Charge Qgd 0.9 nC
Turn-On Delay Time tD(on) 2.0 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6
Turn-On Rise Time tr 5.5 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6
Turn-Off Delay Time tD(off) 152 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6
Turn-Off Fall Time tf 32 ns VDD = 15V, VGS = 10V, RL = 15, RG = 6
Part Number DMN3053L-7 SOT23, 3000/Tape & Reel
Part Number DMN3053L-13 SOT23, 10000/Tape & Reel
Case SOT23
Weight 0.008 grams (approximate)

Notes:

  • 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
  • 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. Copper, single sided.
  • 7. Short duration pulse test used to minimize self-heating effect.
  • 8. Guaranteed by design. Not subject to production testing.
  • 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
  • 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporateds definitions of Halogen- and Antimony-free, "Green" and Lead-free.
  • 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds.
  • 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

1809081621_DIODES-DMN3053L-7_C150469.pdf
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