Diodes DMG2302U 7 N Channel Enhancement Mode MOSFET designed for switching and automotive compliant power circuits
Key Attributes
Model Number:
DMG2302U-7
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
120mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@50uA
Reverse Transfer Capacitance (Crss@Vds):
57.7pF
Number:
1 N-channel
Output Capacitance(Coss):
64.5pF
Input Capacitance(Ciss):
594.3pF
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
7nC@4.5V
Mfr. Part #:
DMG2302U-7
Package:
SOT-23
Product Description
Product Overview
The DMG2302U is an N-channel enhancement mode MOSFET designed for applications requiring low on-resistance, low input capacitance, and fast switching speeds. It features low input/output leakage and is manufactured using environmentally friendly materials, being totally lead-free, fully RoHS compliant, and halogen/antimony free. This device is qualified to AEC-Q101 standards for high reliability. An automotive-compliant part is available under a separate datasheet (DMG2302UQ).
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Case Material: Molded Plastic, "Green" Molding Compound
- UL Flammability Classification: 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: Matte Tin Annealed over Copper Leadframe
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device)
- Reliability: Qualified to AEC-Q101 Standards
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Maximum Ratings (@TA = +25C, unless otherwise specified.) | ||||
| Drain-Source Voltage | VDSS | 20 | V | |
| Gate-Source Voltage | VGSS | ±8 | V | |
| Continuous Drain Current (Note 5) Steady State TA = +25C | ID | 4.2 | A | |
| Continuous Drain Current (Note 5) Steady State TA = +70C | ID | 3.4 | A | |
| Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) (Note 6) | IDM | 27 | A | |
| Total Power Dissipation (Note 5) | PD | 0.8 | W | |
| Thermal Resistance, Junction to Ambient (Note 5) Steady State | RθJA | 156 | °C/W | |
| Total Power Dissipation (Note 6) | PD | 1.4 | W | |
| Thermal Resistance, Junction to Ambient (Note 6) Steady State | RθJA | 91 | °C/W | |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Electrical Characteristics (@TA = +25°C, unless otherwise specified.) | ||||
| OFF CHARACTERISTICS (Note 7) | ||||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 10µA |
| Zero Gate Voltage Drain Current TJ = +25°C | IDSS | — | 100 nA | VDS = 16V, VGS = 0V |
| Gate-Source Leakage | IGSS | — | ±100 nA | VGS = ±8V, VDS = 0V |
| ON CHARACTERISTICS (Note 7) | ||||
| Gate Threshold Voltage | VGS(TH) | 0.4 | 1.0 V | VDS = VGS, ID = 50µA |
| Static Drain-Source On-Resistance | RDS(ON) | 90 - 120 | mΩ | VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A |
| Forward Transfer Admittance | |Yfs| | 13 | S | VDS = 5V, ID = 3.6A |
| Diode Forward Voltage | VSD | 0.75 - 1.0 | V | VGS = 0V, IS = 1A |
| DYNAMIC CHARACTERISTICS (Note 8) | ||||
| Input Capacitance | Ciss | 594.3 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 64.5 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 57.7 | pF | VDS = 10V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 1.5 | Ω | VDS = 0V, VGS = 0V, f = 1MHz |
| Total Gate Charge | Qg | 7.0 | nC | VGS = 4.5V, VDS = 10V, ID = 3.6A |
| Gate-Source Charge | Qgs | 0.9 | nC | VGS = 4.5V, VDS = 10V, ID = 3.6A |
| Gate-Drain Charge | Qgd | 1.4 | nC | VGS = 4.5V, VDS = 10V, ID = 3.6A |
| Turn-On Delay Time | tD(ON) | 7.4 | ns | VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω |
| Turn-On Rise Time | tR | 9.8 | ns | VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω |
| Turn-Off Delay Time | tD(OFF) | 28.1 | ns | VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω |
| Turn-Off Fall Time | tF | 6.7 | ns | VDD = 10V, VGS = 4.5V, RL = 2.78Ω, RG = 1.0Ω |
| Mechanical Data | ||||
| Case | SOT23 | |||
| Weight | 0.008 grams (Approximate) | grams | ||
| Ordering Information (Note 4) | ||||
| Part Number | Case | Packaging | ||
| DMG2302U-7 | SOT23 | 3,000/Tape & Reel | ||
Note: NOT RECOMMENDED FOR NEW DESIGN. USE DMN2056U.
2412251154_DIODES-DMG2302U-7_C96613.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
