DIODES BSS84 7 F P Channel MOSFET Featuring Low Input Capacitance and Superior Switching Performance

Key Attributes
Model Number: BSS84-7-F
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.2Ω@5V
Gate Threshold Voltage (Vgs(th)):
2V@1mA
Reverse Transfer Capacitance (Crss@Vds):
2.8pF
Number:
1 P-Channel
Output Capacitance(Coss):
4.7pF
Input Capacitance(Ciss):
24.6pF
Pd - Power Dissipation:
300mW
Gate Charge(Qg):
590pC@10V
Mfr. Part #:
BSS84-7-F
Package:
SOT-23
Product Description

Product Overview

The BSS84 is a P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, general-purpose interfacing switches, and analog switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to JEDEC standards for High Reliability. An automotive-compliant version (BSS84Q) is available under a separate datasheet.

Product Attributes

  • Brand: Diodes Incorporated
  • Package Material: UL Flammability Classification Rating 94V-0
  • Terminals: Matte Tin Finish (Lead-Free Plating)
  • Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
  • Qualification: Qualified to JEDEC standards (as references in AEC-Q) for High Reliability

Technical Specifications

Characteristic Symbol Value Unit Test Condition
Product Summary
BVDSS BVDSS -50 V TA = +25C
RDS(ON) Max RDS(ON) 10 VGS = -5V, ID = -0.100A
ID ID -130 mA TA = +25C
Maximum Ratings
Drain-Source Voltage VDSS -50 V @ TA = +25C
Drain-Gate Voltage VDGR -50 V RGS 20k
Gate-Source Voltage Continuous VGSS 20 V @ TA = +25C
Drain Current Continuous ID -130 mA @ TA = +25C
Pulsed Drain Current IDM -1.2 A @ TA = +25C
Thermal Characteristics
Total Power Dissipation PD 300 mW @ TA = +25C
Thermal Resistance, Junction to Ambient RJA 417 C/W @ TA = +25C
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C @ TA = +25C
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS -50 V VGS = 0V, ID = -250A
Zero Gate Voltage Drain Current IDSS -1 A VDS = -50V, VGS = 0V, TJ = +25C
Zero Gate Voltage Drain Current IDSS -100 nA VDS = -25V, VGS = 0V, TJ = +25C
Gate-Body Leakage IGSS 10 nA VGS = 20V, VDS = 0V
Gate Threshold Voltage VGS(TH) -0.8 to -2.0 V VDS = VGS, ID = -1mA
Static Drain-Source On-Resistance RDS(ON) 3.2 to 10 VGS = -5V, ID = -0.100A
Forward Transconductance gFS 0.05 S VDS = -25V, ID = -0.1A
Dynamic Characteristics
Input Capacitance Ciss 24.6 to 45 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss 4.7 to 25 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance Crss 2.8 to 12 pF VDS = -25V, VGS = 0V, f = 1.0MHz
Gate Resistance Rg 916 VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge (VGS = -4.5V) Qg 0.28 nC VDS = -10V, ID = -0.1A
Total Gate Charge (VGS = -10V) Qg 0.59 nC VDS = -10V, ID = -0.1A
Gate-Source Charge Qgs 0.09 nC VDS = -10V, ID = -0.1A
Gate-Drain Charge Qgd 0.08 nC VDS = -10V, ID = -0.1A
Turn-On Delay Time tD(ON) 10 ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V
Turn-Off Delay Time tD(OFF) 18 ns VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V
Mechanical Data
Package SOT23
Weight 0.009 grams Approximate
Ordering Information
Part Number Package Packing Qty. Carrier
BSS84-7-F SOT23 (Standard) Tape & Reel 3000
BSS84-13-F SOT23 (Standard) Tape & Reel 10000

2412251154_DIODES-BSS84-7-F_C85202.pdf

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