DIODES BSS84 7 F P Channel MOSFET Featuring Low Input Capacitance and Superior Switching Performance
Product Overview
The BSS84 is a P-Channel Enhancement Mode MOSFET designed to minimize on-state resistance (RDS(ON)) while maintaining superior switching performance. This makes it ideal for high-efficiency power-management applications, general-purpose interfacing switches, and analog switches. Key features include low on-resistance, low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. This device is Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device), and qualified to JEDEC standards for High Reliability. An automotive-compliant version (BSS84Q) is available under a separate datasheet.
Product Attributes
- Brand: Diodes Incorporated
- Package Material: UL Flammability Classification Rating 94V-0
- Terminals: Matte Tin Finish (Lead-Free Plating)
- Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free (Green Device)
- Qualification: Qualified to JEDEC standards (as references in AEC-Q) for High Reliability
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Product Summary | ||||
| BVDSS | BVDSS | -50 | V | TA = +25C |
| RDS(ON) Max | RDS(ON) | 10 | VGS = -5V, ID = -0.100A | |
| ID | ID | -130 | mA | TA = +25C |
| Maximum Ratings | ||||
| Drain-Source Voltage | VDSS | -50 | V | @ TA = +25C |
| Drain-Gate Voltage | VDGR | -50 | V | RGS 20k |
| Gate-Source Voltage Continuous | VGSS | 20 | V | @ TA = +25C |
| Drain Current Continuous | ID | -130 | mA | @ TA = +25C |
| Pulsed Drain Current | IDM | -1.2 | A | @ TA = +25C |
| Thermal Characteristics | ||||
| Total Power Dissipation | PD | 300 | mW | @ TA = +25C |
| Thermal Resistance, Junction to Ambient | RJA | 417 | C/W | @ TA = +25C |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | C | @ TA = +25C |
| Electrical Characteristics | ||||
| Drain-Source Breakdown Voltage | BVDSS | -50 | V | VGS = 0V, ID = -250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS = -50V, VGS = 0V, TJ = +25C |
| Zero Gate Voltage Drain Current | IDSS | -100 | nA | VDS = -25V, VGS = 0V, TJ = +25C |
| Gate-Body Leakage | IGSS | 10 | nA | VGS = 20V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | -0.8 to -2.0 | V | VDS = VGS, ID = -1mA |
| Static Drain-Source On-Resistance | RDS(ON) | 3.2 to 10 | VGS = -5V, ID = -0.100A | |
| Forward Transconductance | gFS | 0.05 | S | VDS = -25V, ID = -0.1A |
| Dynamic Characteristics | ||||
| Input Capacitance | Ciss | 24.6 to 45 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 4.7 to 25 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 2.8 to 12 | pF | VDS = -25V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 916 | VDS = 0V, VGS = 0V, f = 1MHz | |
| Total Gate Charge (VGS = -4.5V) | Qg | 0.28 | nC | VDS = -10V, ID = -0.1A |
| Total Gate Charge (VGS = -10V) | Qg | 0.59 | nC | VDS = -10V, ID = -0.1A |
| Gate-Source Charge | Qgs | 0.09 | nC | VDS = -10V, ID = -0.1A |
| Gate-Drain Charge | Qgd | 0.08 | nC | VDS = -10V, ID = -0.1A |
| Turn-On Delay Time | tD(ON) | 10 | ns | VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V |
| Turn-Off Delay Time | tD(OFF) | 18 | ns | VDD = -30V, ID = -0.27A, RGEN = 50, VGS = -10V |
| Mechanical Data | ||||
| Package | SOT23 | |||
| Weight | 0.009 | grams | Approximate | |
| Ordering Information | ||||
| Part Number | Package | Packing | Qty. | Carrier |
| BSS84-7-F | SOT23 (Standard) | Tape & Reel | 3000 | |
| BSS84-13-F | SOT23 (Standard) | Tape & Reel | 10000 | |
2412251154_DIODES-BSS84-7-F_C85202.pdf
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