power management solution featuring DIODES ZXMN10A07FTA 100V N channel MOSFET with low on resistance
Key Attributes
Model Number:
ZXMN10A07FTA
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+150℃
RDS(on):
-
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
280pF
Pd - Power Dissipation:
806mW
Gate Charge(Qg):
2.9nC@10V
Mfr. Part #:
ZXMN10A07FTA
Package:
SOT-23
Product Description
Product Overview
The ZXMN10A07F is a 100V N-channel enhancement mode MOSFET designed for high efficiency power management applications. It minimizes on-state resistance (RDS(on)) while maintaining superior switching performance. Ideal for DC-DC converters, power management functions, motor control, and disconnect switches.
Product Attributes
- Brand: Diodes Incorporated
- Product Line: A Product Line of Diodes Incorporated
- Package: SOT23
- Material: Molded Plastic, "Green" Molding Compound
- Flammability Classification: UL 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish
- Environmental Compliance: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free. Green Device
- Reliability Qualification: Qualified to AEC-Q101 Standards
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS = 0V, ID = 250A |
| Zero Gate Voltage Drain Current | IDSS | A | VDS = 100V, VGS = 0V, TJ = +25C | |
| Gate-Source Leakage | IGSS | nA | VGS = 20V, VDS = 0V | |
| Gate Threshold Voltage | VGS(th) | 2 | V | VDS = VGS, ID = 250A |
| Static Drain-Source On-Resistance | RDS (ON) | 540 (Typ) | m | VGS = 10V, ID = 1.5A |
| Static Drain-Source On-Resistance | RDS (ON) | 700 (Max) | m | VGS = 10V, ID = 1.5A |
| Static Drain-Source On-Resistance | RDS (ON) | 700 (Typ) | m | VGS = 6V, ID = 1A |
| Static Drain-Source On-Resistance | RDS (ON) | 900 (Max) | m | VGS = 6V, ID = 1A |
| Forward Transconductance | gfs | 1.6 (Typ) | S | VDS = 15V, ID = 1A |
| Diodes Forward Voltage | VSD | 0.85 (Typ) | V | TJ = +25C, IS = 1.5A, VGS = 0V |
| Diodes Forward Voltage | VSD | 0.95 (Max) | V | TJ = +25C, IS = 1.5A, VGS = 0V |
| Input Capacitance | Ciss | 138 (Typ) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Input Capacitance | Ciss | 280 (Max) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 12 (Typ) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 25 (Max) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 6 (Typ) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 12 (Max) | pF | VDS = 50V, VGS = 0V, f = 1.0MHz |
| Gate Resistance | Rg | 2 (Typ) | f = 1MHz, VGS = 0V, VDS = 0V | |
| Gate Resistance | Rg | 4 (Max) | f = 1MHz, VGS = 0V, VDS = 0V | |
| Total Gate Charge | Qg | 2.9 (Typ) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Total Gate Charge | Qg | 6 (Max) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Gate-Source Charge | Qgs | 0.7 (Typ) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Gate-Source Charge | Qgs | 1.5 (Max) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Gate-Drain Charge | Qgd | 1 (Typ) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Gate-Drain Charge | Qgd | 2 (Max) | nC | VGS = 10V, VDS = 50V, ID = 1A |
| Reverse Recovery Time | trr | 27 (Typ) | ns | TJ = +25C, IF = 1.8A, di/dt = 100A/s |
| Reverse Recovery Time | trr | 60 (Max) | ns | TJ = +25C, IF = 1.8A, di/dt = 100A/s |
| Reverse Recovery Charge | Qrr | 12 (Typ) | nC | TJ = +25C, IF = 1.8A, di/dt = 100A/s |
| Turn-On Delay Time | tD(on) | 1.8 (Typ) | ns | VGS = 10V, VDD = 50V, RG = 6, ID = 1A |
| Turn-On Rise Time | tr | 1.5 (Typ) | ns | VGS = 10V, VDD = 50V, RG = 6, ID = 1A |
| Turn-Off Delay Time | tD(off) | 4.1 (Typ) | ns | VGS = 10V, VDD = 50V, RG = 6, ID = 1A |
| Turn-Off Fall Time | tf | 2.1 (Typ) | ns | VGS = 10V, VDD = 50V, RG = 6, ID = 1A |
| Weight | 0.008 (approximate) | grams | ||
| Part Number Marking | 7N1 | |||
| Reel Size | 7 | inches | ||
| Tape Width | 8 | mm | ||
| Quantity per Reel | 3,000 |
1810010913_DIODES-ZXMN10A07FTA_C140566.pdf
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