DIODES DMN26D0UFB4 7B N Channel Enhancement Mode MOSFET with fast switching and low RDS ON resistance
Key Attributes
Model Number:
DMN26D0UFB4-7B
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
240mA
RDS(on):
6Ω@1.8V,20mA
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV
Reverse Transfer Capacitance (Crss@Vds):
3.2pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
28.2pF@15V
Pd - Power Dissipation:
350mW
Mfr. Part #:
DMN26D0UFB4-7B
Package:
DFN-3
Product Description
Product Overview
The DMN26D0UFB4 is a new generation N-Channel Enhancement Mode MOSFET designed for high-efficiency power management applications. It offers minimized on-state resistance (RDS(ON)) and superior switching performance. Ideal for DC-DC converters and power management functions, this device features a very low gate threshold voltage, low input capacitance, fast switching speed, and low input/output leakage. It is available in an ultra-small surface mount package with a maximum height of 0.4mm, ESD protected gate, and is totally lead-free and fully RoHS compliant, making it a "Green" device.
Product Attributes
- Brand: Diodes Incorporated
- Product Type: N-Channel Enhancement Mode MOSFET
- Package Type: X2-DFN1006-3
- Package Material: Molded Plastic, "Green" Molding Compound (UL Flammability Classification Rating 94V-0)
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminal Finish: NiPdAu over Copper Leadframe
- Certifications: Totally Lead-Free & Fully RoHS Compliant, Halogen and Antimony Free ("Green" Device), Qualified to JEDEC standards for High Reliability.
- Automotive Grade: Available for automotive applications requiring specific change control (Q-suffix part, AEC-Q100/101/104/200 qualified, PPAP capable, manufactured in IATF 16949 certified facilities).
Technical Specifications
| Characteristic | Symbol | Value | Unit | Test Condition |
|---|---|---|---|---|
| Drain Source Voltage | BVDSS | 20 | V | VGS = 0V, ID = 100A |
| Gate-Source Voltage | VGSS | ±10 | V | |
| Continuous Drain Current (Note 5) | ID | 240 | mA | VGS = 4.5V, Steady State, TA = +25°C |
| Continuous Drain Current (Note 5) | ID | 190 | mA | VGS = 4.5V, Steady State, TA = +70°C |
| Continuous Drain Current (Note 5) | ID | 180 | mA | VGS = 1.8V, Steady State, TA = +25°C |
| Continuous Drain Current (Note 5) | ID | 140 | mA | VGS = 1.8V, Steady State, TA = +70°C |
| Pulsed Drain Current (Note 5) | IDM | 805 | mA | tP = 10µs |
| Total Power Dissipation (Note 5) | PD | 350 | mW | @TA = +25°C |
| Thermal Resistance, Junction to Ambient (Note 5) | RθJA | 357 | °C/W | Device mounted on FR-4 PC board, minimum recommended pad layout, single sided. |
| Operating and Storage Temperature Range | TJ, TSTG | -55 to +150 | °C | |
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 100µA |
| Zero Gate Voltage Drain Current | IDSS | 500 | nA | VDS = 20V, VGS = 0V, @ TC = +25°C |
| Gate-Body Leakage | IGSS | ±100 | nA | VGS = ±10V, VDS = 0V |
| Gate-Body Leakage | IGSS | ±1 | µA | VGS = ±5V, VDS = 0V |
| Gate Threshold Voltage | VGS(TH) | 0.6 - 0.9 | V | VDS = VGS, ID = 250µA |
| Static Drain-Source On-Resistance | RDS(ON) | 3.0 | Ω | VGS = 4.5V, ID = 100mA |
| Static Drain-Source On-Resistance | RDS(ON) | 6.0 | Ω | VGS = 1.8V, ID = 20mA |
| Forward Transconductance | |Yfs| | 180 - 242 | mS | VDS = 10V, ID = 0.1A |
| Source-Drain Diode Forward Voltage | VSD | 0.5 - 1.4 | V | VGS = 0V, IS = 115mA |
| Input Capacitance | Ciss | 14.1 - 28.2 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Output Capacitance | Coss | 2.9 - 5.8 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Reverse Transfer Capacitance | Crss | 1.6 - 3.2 | pF | VDS = 15V, VGS = 0V, f = 1.0MHz |
| Turn-On Delay Time | tD(ON) | 3.8 | ns | VGS = 4.5V, VDD = 10V, ID = 200mA, RG = 2.0Ω |
| Rise Time | tR | 7.9 | ns | VGS = 4.5V, VDD = 10V, ID = 200mA, RG = 2.0Ω |
| Turn-Off Delay Time | tD(OFF) | 13.4 | ns | VGS = 4.5V, VDD = 10V, ID = 200mA, RG = 2.0Ω |
| Fall Time | tF | 15.2 | ns | VGS = 4.5V, VDD = 10V, ID = 200mA, RG = 2.0Ω |
| Package Dimensions (A) | A | 0.40 | mm | Maximum |
| Weight | 0.001 | grams | Approximate |
Ordering Information
| Part Number | Package | Packing | Qty. | Carrier |
|---|---|---|---|---|
| DMN26D0UFB4-7 | X2-DFN1006-3 | Tape & Reel | 3,000 | |
| DMN26D0UFB4-7B | X2-DFN1006-3 | Tape & Reel | 10,000 |
2308161643_DIODES-DMN26D0UFB4-7B_C7525126.pdf
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